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LTM4615 bảng dữ liệu(PDF) 16 Page - Linear Technology

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LTM4639
16
4639f
For more information www.linear.com/LTM4639
Temperature Monitoring
Measuring the absolute temperature of a diode is possible
due to the relationship between current, voltage and
temperature described by the classic diode equation:
ID =IS • e
VD
η • VT
or
VD = η• VT •ln
ID
IS
where ID is the diode current, VD is the diode voltage, η is
the ideality factor (typically close to 1.0) and IS (saturation
current) is a process dependent parameter. VT can be
broken out to:
VT =
k • T
q
where T is the diode junction temperature in Kelvin, q is
the electron charge and k is Boltzmann’s constant. VT is
approximately 26mV at room temperature (298K) and
scales linearly with Kelvin temperature. It is this linear
temperature relationship that makes diodes suitable
APPLICATIONS INFORMATION
temperature sensors. The IS term in the equation above
is the extrapolated current through a diode junction when
the diode has zero volts across the terminals. The IS term
varies from process to process, varies with temperature,
and by definition must always be less than ID. Combining
all of the constants into one term:
KD =
η • k
q
whereKD=8.62−5,andknowingln(ID/IS)isalwayspositive
because ID is always greater than IS, leaves us with the
equation that:
VD = T(KELVIN)•KD •ln
ID
IS
where VD appears to increase with temperature. It is
common knowledge that a silicon diode biased with a
current source has an approximate –2mV/°C temperature
relationship (Figure 6), which is at odds with the equation.
Infact,theIStermincreaseswithtemperature,reducingthe
ln(ID/IS) absolute value yielding an approximate –2mV/°C
composite diode voltage slope.
Figure 6. Diode Voltage VD vs Temperature T(°C)
for Different Bias Currents
4639 F06
TEMPERATURE (°C)
–173
–73
27
127
0.4
0.6
0.8
1.0
∆VD
ID = 100µA
ID = 10µA



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