Parameter

Symbol

Value

Unit

480 V,

dv/dt

50

V/ns

Reverse diode dv/dt

dv/dt

5

V/ns

Operating Junction and Storage Temperature Range

-55...+150

°C

* limited by maximum junction temperature

Table 2.

Thermal Characteristic

Parameter

Symbol

Value

Unit

Thermal Resistance

Junction-to-Case

Maximum

1.54

°C /W

Thermal Resistance

Junction-to-Ambient

Maximum

62

°C /W

Table 3.

Electrical Characteristics (TA=25

unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

On/off states

Drain-Source Breakdown Voltage

800

V

Zero Gate Voltage Drain Current(Tc=25

)

1

μA

Zero Gate Voltage Drain Current(Tc=125

)

100

μA

Gate-Body Leakage Current

±100

nA

Gate Threshold Voltage

2.5

3

3.5

V

Drain-Source On-State Resistance

1000

1200

mΩ

Dynamic Characteristics

Forward Transconductance

5.5

S

Input Capacitance

F=1.0MHz

680

pF

Output Capacitance

55

pF

Reverse Transfer Capacitance

3.5

pF

Total Gate Charge

14.5

22

nC

Gate-Source Charge

2.8

nC

Gate-Drain Charge

5.5

nC

Intrinsic gate resistance

f = 1 MHz open drain

2

Ω

Switching times

Turn-on Delay Time

7

nS

Turn-on Rise Time

5

nS

Turn-Off Delay Time

70

85

nS

Turn-Off Fall Time

9

15

nS

Source- Drain Diode Characteristics

Source-drain current(Body Diode)

5

A

Pulsed Source-drain current(Body Diode)

15

A

Forward On Voltage

0.85

1.2

V

Reverse Recovery Time

240

nS

Reverse Recovery Charge

2.2

uC

Peak Reverse Recovery Current

16

A

Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2. Tj=25