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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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RM4N650HD bảng dữ liệu(PDF) 1 Page - Rectron Semiconductor |
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RM4N650HD bảng dữ liệu(HTML) 1 Page - Rectron Semiconductor |
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1 / 11 page  N-Channel Super Junction Power MOSFET VDS@Tjmax 650 V RDS(ON) MAX 1200 mΩ ID 4 A General Description Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correction PFC Switched mode power supplies(SMPS) Uninterruptible Power Supply UPS Package Marking And Ordering Information Device Device Package Marking RM4N650T2 TO-220 4N650 RM4N650HD TO-263 4N650 RM4N650TI Table 1. Absolute Maximum Ratings (TC=25 ) Parameter Symbol RM4N650T2 RM4N650HD RM4N650TI Unit Drain-Source Voltage ( VGS=0V VDS 650 V Gate-Source Voltage ( VDS=0V) VGS 30 V Continuous Drain Current at Tc=25°C ID (DC) 4 4* A Continuous Drain Current at Tc=100°C ID (DC) 2.5 2.5 A Pulsed drain current (Note 1) IDM (pluse) 12 12 A Maximum Power Dissipation(Tc=25 ) Derate above 25 °C PD 46 0.37 28.5 0.23 W W/ °C Single pulse avalanche energy (Note2) EAS 130 mJ Avalanche current (Note 1) IAR 2 A Repetitive Avalanche energy tAR limited by Tjmax (Note 1) EAR 0.2 mJ Schematic diagram TO-263 TO-220 TO-220F TO-220F 4N650 RM4N650HD RM4N650T2 RM4N650TI The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. 2017-05 REV:A15 |
Số phần tương tự - RM4N650HD |
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Mô tả tương tự - RM4N650HD |
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