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RM2N650IP bảng dữ liệu(PDF) 1 Page - Rectron Semiconductor

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Giải thích chi tiết về linh kiện  N-Channel Super Junction Power MOSFET
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N-Channel Super Junction Power MOSFET
General Description
The
series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC
SMPS requirements for
PFC,
AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
Application
Power factor correction
PFC
Switched mode power supplies(SMPS)
Uninterruptible Power Supply
UPS
VDS@Tjmax
710
V
RDS(ON) TYP
2.2
Ω
ID
2
A
Package Marking And Ordering Information
Device
Device Package
Marking
TO-251
TO-252
Table 1.
Absolute Maximum Ratings (TC=25
)
Parameter
Symbol
Value
Unit
Drain-Source Voltage (
VGS 0V
VDS
650
V
Gate-Source Voltage (
VDS 0V)
VGS
30
V
Continuous Drain Current
at Tc=25°C
ID (DC)
2
A
Continuous Drain Current
at Tc=100°C
ID (DC)
1.3
A
Pulsed drain current
(Note 1)
IDM (pluse)
6
A
Maximum Power Dissipation(Tc=25 )
Derate above 25
°C
PD
23
0.184
W
W/
°C
Single pulse avalanche energy
(Note2)
EAS
45
mJ
Avalanche current
(Note 1)
IAR
1
A
Repetitive Avalanche energy
tAR limited by Tjmax
(Note 1)
EAR
0.06
mJ
Schematic diagram
TO-251
TO-252
RM2N650IP
2N650
2N650
RM2N650LD
RM2N650IP
RM2N650LD
2016-09
REV:O15


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