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ZXTP5240F bảng dữ liệu(PDF) 2 Page - Diodes Incorporated

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ZXTP5240F
Document number: DS39609 Rev. 2 - 2
2 of 7
www.diodes.com
April 2018
© Diodes Incorporated
ZXTP5240F
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Collector Current
ICM
-3
A
Continuous Collector Current
IC
-2
A
Base Current
IB
-300
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
730
mW
Power Dissipation (Note 6)
PD
600
mW
Thermal Resistance, Junction to Ambient Air (Note 5)
RθJA
171
°C/W
Thermal Resistance, Junction to Ambient Air (Note 6)
RθJA
209
°C/W
Thermal Resistance, Junction to Lead (Note 7)
RθJL
75
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on minimum recommended pad layout.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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