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IPD033N06N bảng dữ liệu(PDF) 4 Page - Infineon Technologies AG

tên linh kiện IPD033N06N
Giải thích chi tiết về linh kiện  OptiMOSTM Power-Transistor, 60 V
PDF  11 Pages
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nhà sản xuất  INFINEON [Infineon Technologies AG]
Trang chủ  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPD033N06N bảng dữ liệu(HTML) 4 Page - Infineon Technologies AG

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4
OptiMOSTMPower-Transistor,60V
IPD033N06N
Rev.2.0,2016-09-12
Final Data Sheet
3Electricalcharacteristics
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
60
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
2.1
2.8
3.3
V
VDS=VGS,ID=50µA
Zero gate voltage drain current
IDSS
-
-
0.5
10
1
100
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
3.0
4.1
3.3
5.0
m
Ω
VGS=10V,ID=90A
VGS=6V,ID=22.5A
Gate resistance
1)
RG
-
1.2
1.8
Ω
-
Transconductance
gfs
65
130
-
S
|VDS|>2|ID|RDS(on)max,ID=90A
Table5Dynamiccharacteristics1)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
Ciss
-
2700
3400
pF
VGS=0V,VDS=30V,f=1MHz
Output capacitance
Coss
-
670
840
pF
VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance
Crss
-
28
56
pF
VGS=0V,VDS=30V,f=1MHz
Turn-on delay time
td(on)
-
10
-
ns
VDD=30V,VGS=10V,ID=90A,
RG,ext,ext=1.6
Ω
Rise time
tr
-
5
-
ns
VDD=30V,VGS=10V,ID=90A,
RG,ext,ext=1.6
Ω
Turn-off delay time
td(off)
-
20
-
ns
VDD=30V,VGS=10V,ID=90A,
RG,ext,ext=1.6
Ω
Fall time
tf
-
5
-
ns
VDD=30V,VGS=10V,ID=90A,
RG,ext,ext=1.6
Ω
Table6Gatechargecharacteristics2)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
14
-
nC
VDD=30V,ID=90A,VGS=0to10V
Gate charge at threshold
Qg(th)
-
8
-
nC
VDD=30V,ID=90A,VGS=0to10V
Gate to drain charge
1)
Qgd
-
7
10
nC
VDD=30V,ID=90A,VGS=0to10V
Switching charge
Qsw
-
13
-
nC
VDD=30V,ID=90A,VGS=0to10V
Gate charge total
1)
Qg
-
38
44
nC
VDD=30V,ID=90A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.0
-
V
VDD=30V,ID=90A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
33
-
nC
VDS=0.1V,VGS=0to10V
Output charge
1)
Qoss
-
44
59
nC
VDD=30V,VGS=0V
1) Defined by design. Not subject to production test
2) See
″Gate charge waveforms″ for parameter definition



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