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EN29F800 bảng dữ liệu(PDF) 21 Page - List of Unclassifed Manufacturers

tên linh kiện EN29F800
Giải thích chi tiết về linh kiện  8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only
PDF  38 Pages
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nhà sản xuất  ETC [List of Unclassifed Manufacturers]
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EN29F800 bảng dữ liệu(HTML) 21 Page - List of Unclassifed Manufacturers

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4800 Great America Parkway, Suite 202
Tel: 408-235-8680
Santa Clara, CA 95054
Fax: 408-235-8685
21
EN29F800
Rev. E, Issue Date: 2001/07/05
Table 7. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 5.0V ± 10%)
Notes:
(1) BYTE# and RESET# pin input buffers are always enabled so that they draw power if not at full CMOS
supply voltages
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ Vcc
±5
µA
ILO
Output Leakage Current
0V
≤ VOUT ≤ Vcc
±5
µA
Supply Current (read) TTL
19
30
mA
(read) CMOS Byte
20
40
mA
ICC1
(read) CMOS Word
CE# = VIL; OE# = VIH;
f = 5MHz
28
50
mA
Supply Current (Standby - TTL)
CE# = VIH
0.4
1.0
mA
ICC2
(Standby - CMOS)
(1)
BYTE# = RESET# =
CE# = Vcc ± 0.2V
0.3
5.0
µA
ICC3
Supply Current (Program or Erase)
Byte program, Sector or
Chip Erase in progress
30
60
mA
VIL
Input Low Voltage
-0.5
0.8
V
VIH
Input High Voltage
2
Vcc ±
0.5
V
VOL
Output Low Voltage
IOL = 2 mA
0.45
V
Output High Voltage TTL
IOH = -2.5 mA
2.4
V
VOH
Output High Voltage CMOS
IOH = -100 µA
Vcc -
0.4V
V
VID
A9 Voltage (Electronic Signature)
10.5
11.5
V
IID
A9 Current (Electronic Signature)
A9 = VID
100
µA
VLKO
Supply voltage (Erase and
Program lock-out)
3.2
4.2
V



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