2S2M datasheet(1/6 Pages) NEC

tên linh kiện	2S2M

Giải thích chi tiết về linh kiện	THYRISTORS 2 A HIGH-SPEED SWITCHING SCR

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1998

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Document No. D13535EJ2V0DS00 (2nf edition)

Date Published April 2002 N CP(K)

Printed in Japan

THYRISTORS

2S2M, 2S4M

2 A HIGH-SPEED SWITCHING SCR

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The 2S2M and 2S4M are P-gate fully diffused mold SCRs

with an average on-current of 2 A. The repeat peak off-voltages

(and reverse voltages) are 200 V and 400 V.

FEATURES

• This transistor is designed for high-speed switching and is

deal for use in commercial frequencies, high-frequency pulse

applications, and inverter applications.

• This transistor features a small and lightweight package and

is easy to handle even on the mounting surface due to its

TO-202AA dimensions. Processing of lead wires and

heatsink (tablet) using jigs is also possible.

• Employs flame-retardant epoxy resin (UL94V-0).

APPLICATIONS

Consumer electronic euipments, ignitors of devices for light

indutry, inverter, and solenoid valve drives

PACKAGE DRAWING (UNIT: mm)

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

2S2M

2S4M

Ratings

Unit

Non-repetitive peak reverse voltage

VRSM

300

500

V

RGK = 1 k

Ω

Non-repetitive peak off-state voltage

VDSM

300

500

V

RGK = 1 k

Ω

Repetitive peak reverse voltage

VRRM

200

400

V

RGK = 1 k

Ω

Repetitive peak off-voltage

VDRM

200

400

V

RGK = 1 k

Ω

Average on-state current

IT(AV)

2 (Tc = 77

°C, Single half-wave,

θ = 180°)A

Refer to Figure 6 snd 7.

Surge on-state current

ITSM

20 (f = 50 Hz, Sine half-wave, 1 cycle)

A

Refer to Figure 2.

High-frequency peak on-state current

ITRM

15 (Tc = 65

°C, f = 10 kp.p.s, tp = 10

µs)

A

−

Fusing current

∫ it2dt

1.6 (1 ms

≤t≤10 ms)

A

2s

−

Critical rate of rise of on-state current

dIT/dt

50

A/

µs

−

Peak gate power dissipation

PGM

0.5 (f

≥50 Hz, Duty≤10%)

W

−

Average gate power dissipation

PG(AV)

0.1

W

Peak gate forward current

IFGM

0.2 (f

≥50 Hz, Duty≤10%)

A

−

Peak gate reverse voltage

VRGM

6V

−

Junction temperature

Tj

−40 to +125

°C

−

Storage temperature

Tstg

−55 tp +150

°C

−

Electrode connection

<1>Cathode

<2>Anode

<3>Gate

Standard weight: 1.4

*TC test bench-mark

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