VS-ST230SVPBF datasheet(2/8 Pages) VISHAY

2 / 8 page

VS-ST230S...VPbF Series

www.vishay.com

Vishay Semiconductors

Revision: 28-Sep-17

Document Number: 96113

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average on-state current



at case temperature

IT(AV)

180° conduction, half sine wave

230

°C

Maximum RMS on-state current

IT(RMS)

DC at 78 °C case temperature

360

Maximum peak, one-cycle



non-repetitive surge current

ITSM

t = 10 ms

No voltage

reapplied

Sinusoidal half wave,



initial TJ = TJ maximum

5700

t = 8.3 ms

5970

t = 10 ms

100 % VRRM

reapplied

4800

t = 8.3 ms

5000

Maximum I2t for fusing

I2t

t = 10 ms

No voltage

reapplied

163

kA2s

t = 8.3 ms

148

t = 10 ms

100 % VRRM 

reapplied

115

t = 8.3 ms

105

Maximum I2

t for fusing

t

t = 0.1 to 10 ms, no voltage reapplied

1630

kA2

s

Low level value of threshold voltage

VT(TO)1

(16.7 % x

 x I

T(AV) < I <  x IT(AV)), TJ = TJ maximum

0.92

High level value of threshold voltage

VT(TO)2

(I >

 x I

T(AV)), TJ = TJ maximum

0.98

Low level value of on-state slope resistance

rt1

(16.7 % x

 x I

T(AV) < I <  x IT(AV)), TJ = TJ maximum

0.88



High level value of on-state slope resistance

rt2

(I >

 x I

T(AV)), TJ = TJ maximum

0.81

Maximum on-state voltage

VTM

Ipk = 720 A, TJ = TJ maximum, tp = 10 ms sine pulse

1.55

Maximum holding current

TJ = 25 °C, anode supply 12 V resistive load

600

Maximum (typical) latching current

1000 (300)

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum non-repetitive rate of rise



of turned-on current

dI/dt

Gate drive 20 V, 20

, t

r  1 μs

TJ = TJ maximum, anode voltage  80 % VDRM

1000

A/μs

Typical delay time

Gate current 1 A, dIg/dt = 1 A/μs

Vd = 0.67 % VDRM, TJ = 25 °C

1.0

μs

Typical turn-off time

ITM = 300 A, TJ = TJ maximum, dIF/dt = 20 A/μs, 

VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs

100

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum critical rate of rise



of off-state voltage

dV/dt

TJ = TJ maximum linear to 80 % rated VDRM

500

V/μs

Maximum peak reverse and



off-state leakage current

IRRM,

IDRM

TJ = TJ maximum, rated VDRM/VRRM applied

VS-ST230SVPBF bảng dữ liệu(PDF) 2 Page - Vishay Siliconix

VS-ST230SVPBF bảng dữ liệu(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL