2

Electrical Specifications

1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.

2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6220 published specifications.

3. This final package part performance is verified by a functional test correlated to actual performance at one or more

frequencies.

4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may

be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)

matching.

5. All tested parameters guaranteed with measurement accuracy +/-1.5 dB for gain and +/-0.4dB for NF

Table 1. RF Electrical Characteristics

TA=25°C, Vdd=4.0V, Idd=135mA, Zo=50 Ω

Parameter

Min

Typ.

Max

Unit

Comment

Small Signal Gain, Gain

19

23

dB

Test Frequency = 20, 26, 29 GHz

Noise Figure into 50 Ω, NF

3

4.5

dB

Test Frequency = 20, 26, 29 GHz

Output Power at 1 dB Gain Compression, P-1dB

18

dBm

Output Power at 3 dB Gain Compression, Psat

20

dBm

Output Third Order Intercept Point, OIP3

29

dBm

Isolation, Iso

-45

dB

Input Return Loss, RLin

-10

dB

Output Return Loss, RLout

-10

dB

Table 2. Recommended Operating Range

1. Ambient operational temperature TA = 25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal

Resistance at backside temperature (Tb) = 25°C calculated from measured data.

Description

Min.

Typical

Max.

Unit

Comments

Drain Supply Current, Idd

135

150

mA

Vd = 4.5 V, Under any RF power drive and temperature

Drain Supply Voltage, Vd

3

4

5

V

Gate Bias Current, Ig

0.1

mA

Gate Bias Voltage, Vg

-1.1

-0.95

-0.8

V