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QW-BSC10

Silicon Carbide Power Schottky Diode

REV:A

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

CDBJFSC3650-G

RoHS Device

Reverse Voltage: 650 V

Forward Current: 3 A

Parameter

Unit

Repetitive peak reverse voltage

DC blocking voltage

Typical continuous forward current

Non-repetitive peak forward surge current

Power dissipation

Typical thermal resistance

Operating junction temperature range

Symbol

650

30

53.2

23

7.83

-55 ~ +175

V

V

A

A

W

°C/W

°C

Storage temperature range

-55 ~ +175

°C

Value

650

3

Repetitive peak forward surge current

15

A

Conditions

Tc = 25°C, tp = 10ms

Half sine wave, D = 0.3

Tc = 25°C, tp = 10ms

Half sine wave

= 25°C

Tc

= 110°C

Tc

Junction to case

Surge peak reverse voltage

650

V

Circuit diagram

K(1)

A(2)

K(3)

Features

- Rated to 650V at 3 Amps

- Short recovery time.

- High speed switching possible.

- Temperature independent switching behaviour.

- High temperature operation.

- High frequency operation.

- Positive

.

temperature coefficient on VF

TO-220F

Dimensions in inches and (millimeter)

0.516(13.10)

0.539(13.70)

0.100(2.55)

0.112(2.85)

0.602(15.30)

0.587(14.90)

0.130(3.30)

0.118(3.00)

0.388( 9.85)

0.404(10.25)

0.031(0.80)

0.020(0.50)

0.055(1.40)

0.031(0.80)

0.020(0.50)

0.043(1.10)

0.039(1.00)

0.024(0.60)

0.130(3.30)

0.154(3.90)

0.264(6.70)

0.248(6.30)

0.201(5.10)

0.118(3.00)

0.126(3.20)

0.173(4.40)

0.185(4.70)

0.098(2.50)

0.110(2.80)

0.100(2.55)