FMMT6517 datasheet(4/7 Pages) DIODES

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FMMT6517

Datasheet Number: DS33122 Rev.4 - 2

4 of 7

www.diodes.com

February 2017

FMMT6517

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

350

—

IC = 100µA

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

350

—

IC = 1mA

Emitter-Base Breakdown Voltage

BVEBO

—

IE = 100µA

Collector Cutoff Current

ICBO

—

VCB = 250V

Emitter Cutoff Current

IEBO

—

VEB = 6V

Static Forward Current Transfer Ratio

(Note 9)

hFE

—

200

—

IC = 1mA, VCE = 10V

IC = 10mA, VCE = 10V

IC = 30mA, VCE = 10V

IC = 50mA, VCE = 10V

IC = 100mA, VCE = 10V

Collector-Emitter Saturation Voltage (Note 9)

VCE(SAT)

—

0.3

0.35

0.5

1.0

IC = 10mA, IB = 1mA

IC = 20mA, IB = 2mA

IC = 30mA, IB = 3mA

IC = 50mA, IB = 5mA

Base-Emitter Saturation Voltage (Note 9)

VBE(SAT)

—

0.80

0.85

0.90

IC = 10mA, IB = 1mA

IC = 20mA, IB = 2mA

IC = 30mA, IB = 3mA

Base-Emitter Turn-On Voltage (Note 9)

VBE(ON)

—

2.0

IC = 100mA, VCE = 10V

Output Capacitance

COBO

—

VCB = 20V. f = 1MHz

Transition Frequency

—

MHz

VCE = 20V, IC = 10mA,

f = 20MHz

Note:

9. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

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