IXTP05N100P datasheet(1/5 Pages) IXYS

tên linh kiện	IXTP05N100P

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

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DS100272A(12/10)

V

DSS

= 1000V

I

D25

= 0.5A

R

DS(on)

≤≤≤≤≤ 30Ω

Ω

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1000

V

GSS

Continuous

± 20

V

GSM

Transient

± 30

V

I

D25

T

C = 25°C

0.5

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

1.25

A

I

A

T

C = 25°C

0.5

A

E

AS

T

C = 25°C50

mJ

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS,TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C50

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque

1.13/10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

IXTA05N100P

IXTP05N100P

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

1000

V

GS(th)

V

DS = VGS, ID = 50μA

2.0

4.0

V

I

GSS

V

GS = ± 20V, VDS = 0V

± 50

nA

I

DSS

V

DS = VDSS, VGS = 0V

10

μA

T

J = 125°C

750

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

24

30

Ω

PolarTM

Power MOSFET

Features

International Standard Packages

Avalanche Rated

Fast Intrinsic Diode

Dynamic dv/dt Rated

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-263 AA (IXTA)

G

D S

TO-220AB (IXTP)

D (Tab)

G

S

D (Tab)

Preliminary Technical Information

Số phần tương tự - IXTP05N100P

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
IXYS Corporation	IXTP05N100P	283Kb / 7P	Fast Intrinsic Diode

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