IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTF1N250

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

1.0

1.8

mS

C

iss

1660

pF

C

oss

V

77

pF

C

rss

23

pF

t

d(on)

69

ns

t

r

25

ns

t

d(off)

132

ns

t

f

39

ns

Q

g(on)

41

nC

Q

gs

V

8

nC

Q

gd

16

nC

R

thJC

1.13

°C/W

R

thCS

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

1.5

A

I

SM

Repetitive, pulse width limited by T

JM

6

A

V

SD

I

1.5

V

t

rr

I

2.5

µs

Resistive Switching Times

V

R

Pin 1 = Gate

Pin 2 = Source

Pin 3 = Drain

Tab 4 = Isolated

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Notes 1. Pulse test, t

≤ 300µs, duty cycle, d ≤ 2%.

2. Device must be heatsunk for high-temp I

DSS

measurement to avoid thermal runaway.