IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH1N200P3

IXTA1N200P3HV

IXTH1N200P3HV

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

0.4

0.7

S

C

iss

646

pF

C

oss

V

50

pF

C

rss

17

pF

t

d(on)

16

ns

t

r

26

ns

t

d(off)

37

ns

t

f

80

ns

Q

g(on)

23.5

nC

Q

gs

V

3.1

nC

Q

gd

13.3

nC

R

thJC

1.0

C/W

R

thCS

TO-247

0.21

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

1

A

I

SM

Repetitive, Pulse Width Limited by T

JM

4

A

V

SD

I

1.5

V

t

rr

I

2.3

μs

Note:

1. Pulse test, t

 300s, duty cycle, d  2%.

Resistive Switching Times

V

R

TO-263HV Outline

PIN: 1 - Gate

2 - Source

3 - Drain

E

A

C2

L1

D

1

2

b2

C

b

e1

e2

A1

D1

3

E1

H

L3

L4

0

8

A2

L

GAUGE

PLANE

TO-247HV Outline

PINS:

1 - Gate 2 - Source

3, 4 - Drain

E

R

A

Q S

A3

e

c

A1

L1

D3

2X

A2

0P

3

1 2

e1

b

D1

D2

E2

E3

3X

4X

3X

b1

E1

0P1

4

TO-247 Outline

1 - Gate

2,4 - Drain

3 - Source

E

D1

E1

D2

A1

L1

P1

C

B

A

b

b2

b4

R

D

L

e

S

A

D

C

Q

1

2

3

4

A2

D

L