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PDTC114TK bảng dữ liệu(PDF) 4 Page - NXP Semiconductors |
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PDTC114TK bảng dữ liệu(HTML) 4 Page - NXP Semiconductors |
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4 / 14 page ![]() 2004 Aug 02 4 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 k Ω, R2 = open PDTA114T series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line. THERMAL CHARACTERISTICS Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−50 V VCEO collector-emitter voltage open base −−50 V VEBO emitter-base voltage open collector −−5V IO output current (DC) −−100 mA ICM peak collector current −−100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT54 note 1 − 500 mW SOT23 note 1 − 250 mW SOT346 note 1 − 250 mW SOT323 note 1 − 200 mW SOT416 note 1 − 150 mW SOT883 notes 2 and 3 − 250 mW SOT490 notes 1 and 2 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air SOT54 note 1 250 K/W SOT23 note 1 500 K/W SOT346 note 1 500 K/W SOT323 note 1 625 K/W SOT416 note 1 833 K/W SOT883 notes 2 and 3 500 K/W SOT490 notes 1 and 2 500 K/W |
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