PESDXS2UQ datasheet(6/13 Pages) PHILIPS

tên linh kiện	PESDXS2UQ

Giải thích chi tiết về linh kiện	Double ESD protection diodes in SOT663 package

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6 / 13 page

2004 Apr 27

Philips Semiconductors

Product speciﬁcation

Double ESD protection diodes

in SOT663 package

PESDxS2UQ series

Notes

1. Non-repetitive current pulse 8/20

µs exponential decay waveform; see Fig.2.

2. Measured either across pins 1 and 3 or pins 2 and 3.

Rdiff

differential resistance

PESD3V3S2UQ

IR =5mA

−−

Ω

PESD5V0S2UQ

IR =5mA

−−

Ω

PESD12VS2UQ

IR =5mA

−−

Ω

PESD15VS2UQ

IR =1mA

−−

225

Ω

PESD24VS2UQ

IR = 0.5 mA

−−

300

Ω

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

GRAPHICAL DATA

tp (µs)

1103

102

001aaa726

103

102

104

Ppp

(W)

Fig.4

Peak pulse power dissipation as a function

of pulse time; typical values.

Tamb =25 °C.

tp = 8/20 µs exponential decaying waveform; see Fig.2.

Tj (°C)

200

150

100

001aaa193

0.4

0.8

1.2

Ppp

Ppp(25˚C)

Fig.5

Relative variation of peak pulse power as a

function of junction temperature; typical

values.

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