IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH2N150

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note:

1. Pulse test, t

 300s, duty cycle, d  2%.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

1.5

2.5

S

C

iss

830

pF

C

oss

V

64

pF

C

rss

24

pF

R

GI

Gate Input Resistance

5.1



t

d(on)

16

ns

t

r

26

ns

t

d(off)

55

ns

t

f

70

ns

Q

g(on)

28

nC

Q

gs

V

4

nC

Q

gd

16

nC

R

thJC

0.73

C/W

R

thCS

0.21

C/W

Resistive Switching Times

V

R

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

2

A

I

SM

Repetitive, Pulse Width Limited by T

JM

8

A

V

SD

I

1.3

V

t

rr

377

ns

Q

RM

1.7

C

I

RM

9.2

A

I

V

TO-247 Outline

1 - Gate

2,4 - Drain

3 - Source

E

D1

E1

D2

A1

L1

P1

C

B

A

b

b2

b4

R

D

L

e

S

A

D

C

Q

1

2

3

4

A2