53124_13 datasheet(4/14 Pages) MICROPAC

4 / 14 page

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7/15/13

Rev E

Pg.

4 of 14

53124

Radiation Tolerant Power MOSFET Optocoupler

TYPICAL CHARACTERISTICS - (Pre-Irradiation)

All typical values are at TA = 25°C, IF (ON) = 10 mA, VF (OFF) = 0.6 V unless otherwise specified.

Parameter

Symbol

Test Conditions

Typical Value

Units

Notes

Output Off-Capacitance

CO (OFF)

VO = 28 V

f = 1 MHz

145

Output Offset Voltage

VOS

IF = 10 mA

IO = 0 mA

V

Input Diode Temperature Coefficient

V

F /TA

IF = 10 mA

-1.4

mV/°C

Input Capacitance

CIN

VF = 0 V

f = 1 MHz

Input-Output Capacitance

CI-O

VI-O = 0 V

f = 1 MHz

1.5

Input-Output Resistance

RI-O

VI-O = 500 V

t = 60 s



Notes:

Maximum average current rating where the case temperature (TC) is maintained below 120°C.

Maximum junction to case thermal resistance for the device is 10°C/W, where case temperature (TC) is measured at

the center of the package bottom.

For rating, see Figure 5. The output power PD rating curve is obtained when the part is handling the maximum

average output current IO as shown in Figure 3.

During the pulsed RON measurement (IO duration < 30 ms), ambient (TA) and case temperature (TC) are equal.

Pins 2 through 3 shorted together and pins 5 through 8 shorted together.

This is a momentary withstand test, not an operating condition.

VOS is a function of IF and is defined between pins 5 and 8, with pin 5 as the reference. VOS must be measured in a

stable ambient (free of temperature gradients).

Zero-bias capacitance measured between the LED anode and cathode.

CAUTION:

Care should be taken not to exceed the maximum output power dissipation, maximum case temperature, and

maximum junction temperature when repetitively switching loads.

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