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SS32B bảng dữ liệu(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited

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Schottky Barrier Rectifiers
SS32B--SS345B
SMB401AA
www.gmesemi.com
Rev.B
Production specification
Features
Metal silicon junction, majority carrier conduction
High surge capability
High temperature soldering guaranteed:
260°C/10 seconds
High current capability, low forward voltage drop
Guarding for over voltage protection
RoHS Compliant
Mechanical Data
Case: SMB molded plastic
Molding compound, UL flammability classification rating 94V-0
Terminals: Matte tin plated leads, solderable perJ-STD-002 and JESD22-B102
Polarity: Color band denotes cathode end
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
SS32B
SS33B
SS34B
SS345B
Units
Peak repetitive reverse voltage
VRRM
20
30
40
45
V
RMS reverse voltage
VRMS
14
21
28
31.5
V
DC blocking voltage
VDC
20
30
40
45
V
Maximum average forward output current
IF(AV)
3.0
A
Peak forward surge current,
8.3ms single half-sine-wave
IFSM
80
A
Thermal Characteristics
Note:
1. Device mounted on PCB with 10 mm x 20 mm x 0.1mm copper pad areas
Parameter
Symbol
SS32B
SS33B
SS34B
SS345B
Units
Typical thermal resistance
(Note 1)
R ΘJA
R ΘJC
R ΘJL
60
°C /W
23
25
Operating junction temperature range
TJ
- 55 ---- + 125
°C
Storage temperature range
TSTG
- 55 ---- + 150
°C


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