BC857FA

Document number: DS36019 Rev. 2 - 2

2 of 6

www.diodes.com

May 2017

© Diodes Incorporated

BC857BFA

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

435

mW

Thermal Resistance, Junction to Ambient (Note 5)

287

°C/W

Thermal Resistance, Junction to Lead (Note 6)

150

C/W

Operating and Storage and Temperature Range

-55 to +150

°C

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

200

V

B

Notes:

5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured

under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.

6. Thermal resistance from junction to solder-point (on the exposed collector pad).

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Thermal Characteristics and Derating Information

100m

1

10

10m

100m

100µs

Single Pulse

T

amb

=25°C

V

CE(sat)

Limited

1ms

10ms

100ms

1s

DC

Safe Operating Area

- V

CE

Collector-Emitter Voltage (V)

0

20

40

60

80

100

120

140

160

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

Derating Curve

Temperature (°C)

100µ

1m

10m 100m

1

10

100

1k

0

25

50

75

100

125

150

175

200

225

250

275

300

T

amb

=25°C

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Pulse Width (s)

100µ

1m

10m 100m

1

10

100

1k

1

10

100

Single Pulse

T

amb

=25°C

Pulse Power Dissipation

Pulse Width (s)