2SC829 datasheet(1/4 Pages) PANASONIC

tên linh kiện	2SC829

Giải thích chi tiết về linh kiện	Silicon NPN epitaxial planar type

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Publication date: March 2003

SJC00098CED

Transistors

2SC0829 (2SC829)

Silicon NPN epitaxial planar type

For high-frequency amplification

■ Features

• Optimum for RF amplification, oscillation, mixing, and IF stage

of FM/AM radios

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

30

V

Collector-emitter voltage (Base open)

VCEO

20

V

Emitter-base voltage (Collector open)

VEBO

5V

Collector current

IC

30

mA

Collector power dissipation

PC

400

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC

= 10 µA, I

E

= 030

V

Collector-emitter voltage (Base open)

VCEO

IC = 2 mA, IB = 020

V

Emitter-base voltage (Collector open)

VEBO

IE = 10 µA, IC = 05

V

Forward current transfer ratio *

hFE

VCE

= 10 V, I

C

= 1 mA

70

250



Transition frequency

fT

VCB = 10 V, IE = −1 mA, f = 200 MHz

150

230

MHz

Reverse transfer capacitance

Cre

VCB = 10 V, IE = −1 mA, f = 10.7 MHz

1.3

1.6

pF

(Common emitter)

Reverse transfer impedance

Zrb

VCB = 10 V, IE = −1 mA, f = 2 MHz

60

Ω

Unit: mm

1: Emitter

2: Collector

3: Base

TO-92-B1 Package

5.0±0.2

0.7±0.1

0.45

+0.15

–0.1

2.5

+0.6

–0.2

0.45

+0.15

–0.1

2.5

12 3

+0.6

–0.2

4.0±0.2

Note) The part number in the parenthesis shows conventional part number.

■ Electrical Characteristics T

a

= 25°C ± 3°C

Rank

B

C

hFE

70 to 160

110 to 250

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Số phần tương tự - 2SC829

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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