DMTH10H010LPS

Document number: DS39907 Rev. 3 - 2

2 of 7

www.diodes.com

August 2017

© Diodes Incorporated

DMTH10H010LPS

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

100

V

Gate-Source Voltage

±20

V

Steady

State

10.8

7.6

A

Steady

State

98.4

69.6

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

250

A

Maximum Continuous Body Diode Forward Current

95

A

Pulsed Body Diode Forward Current (10

μs Pulse, Duty Cycle = 1%)

250

A

Avalanche Current, L=0.3mH

15

A

Avalanche Energy, L=0.3mH

33.7

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

1.5

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

99

°C/W

Total Power Dissipation

125

W

Thermal Resistance, Junction to Case

1.2

°C/W

Operating and Storage Temperature Range

-55 to +175

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

100

—

—

V

Zero Gate Voltage Drain Current

—

—

1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

1.4

1.9

3

V

Static Drain-Source On-Resistance

—

6.9

8.6

m

Ω

—

7.5

12

—

10

20

Diode Forward Voltage

—

0.8

1.3

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

—

2592

—

pF

f = 1MHz

Output Capacitance

—

792

—

Reverse Transfer Capacitance

—

45

—

Gate Resistance

—

2

—

Ω

Total Gate Charge

—

53.7

—

nC



Gate-Source Charge

—

10.6

—

Gate-Drain Charge

—

8.2

—

Turn-On Delay Time

—

11.6

—

ns

Turn-On Rise Time

—

14.1

—

Turn-Off Delay Time

—

42.9

—

Turn-Off Fall Time

—

22

—

Reverse Recovery Time

—

49.8

—

ns

Reverse Recovery Charge

—

85.1

—

nC

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.