DMT68M8LSS-13 datasheet(2/7 Pages) DIODES

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DMT68M8LSS

Document number: DS39396 Rev. 2 - 2

2 of 7

www.diodes.com

May 2017

DMT68M8LSS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

TA = +25°C

TA = +70°C

12.1

9.7

TC = +25°C

TC = +70°C

28.9

9.7

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

100

Maximum Continuous Body Diode Forward Current (Note 6)

Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)

ISM

100

Avalanche Current, L = 0.3mH

IAS

Avalanche Energy, L = 0.3mH

EAS

54.2

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

1.3

Thermal Resistance, Junction to Ambient (Note 5)

RJA

°C/W

Total Power Dissipation (Note 6)

1.9

Thermal Resistance, Junction to Ambient (Note 6)

RθJA

°C/W

Thermal Resistance, Junction to Case (Note 6)

RθJC

11.7

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS

—

μA

VDS = 48V, VGS = 0V

Gate-Source Leakage

IGSS

—

±10

μA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

—

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

6.7

8.5

Ω

VGS = 10V, ID = 13.5A

—

8.9

VGS = 4.5V, ID = 11.5A

Diode Forward Voltage

VSD

—

0.9

1.2

VGS = 0V, IS = 20A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

2107

—

VDS = 30V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

634

—

Reverse Transfer Capacitance

Crss

—

Gate Resistance

—

1.8

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 10V)

—

31.8

—

VDD = 30V, ID = 20A

Total Gate Charge (VGS = 4.5V)

—

15.6

—

Gate-Source Charge

Qgs

—

3.4

—

Gate-Drain Charge

Qgd

—

6.6

—

Turn-On Delay Time

tD(ON)

—

4.6

—

VDD = 30V, VGS = 10V,

ID = 20A, Rg = 3.3Ω

Turn-On Rise Time

—

7.9

—

Turn-Off Delay Time

tD(OFF)

—

25.2

—

Turn-Off Fall Time

—

13.9

—

Body Diode Reverse Recovery Time

tRR

—

19.3

—

IF = 15A, di/dt = 500A/μs

Body Diode Reverse Recovery Charge

QRR

—

38.1

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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