IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Pulse Width - Seconds

0.001

0.01

0.1

1

0.01

0.10

1.00

Fig.18 Diode Transient Thermal resistance junction to case

IXGH32N60BU1