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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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IRL3705Z bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRL3705Z bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRL3705Z/S/L 2 www.irf.com S D G S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.055 ––– V/°C ––– 6.5 8.0 RDS(on) Static Drain-to-Source On-Resistance ––– ––– 11 m Ω ––– ––– 12 VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V gfs Forward Transconductance 150 ––– ––– V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 40 60 Qgs Gate-to-Source Charge ––– 12 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 21 ––– td(on) Turn-On Delay Time ––– 17 ––– tr Rise Time ––– 240 ––– ns td(off) Turn-Off Delay Time ––– 26 ––– tf Fall Time ––– 83 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 2880 ––– Coss Output Capacitance ––– 420 ––– Crss Reverse Transfer Capacitance ––– 220 ––– pF Coss Output Capacitance ––– 1500 ––– Coss Output Capacitance ––– 330 ––– Coss eff. Effective Output Capacitance ––– 510 ––– Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 75 (Body Diode) A ISM Pulsed Source Current ––– ––– 340 (Body Diode) Ã VSD Diode Forward Voltage––– ––– 1.3 V trr Reverse Recovery Time ––– 1624ns Qrr Reverse Recovery Charge––– 7.4 11 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 5.0V e VDD = 28V ID = 43A RG = 4.3 Ω TJ = 25°C, IS = 52A, VGS = 0V e TJ = 25°C, IF = 43A, VDD = 28V di/dt = 100A/µs e Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 52A e VDS = VGS, ID = 250µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C MOSFET symbol showing the integral reverse p-n junction diode. Conditions VGS = 5.0V e VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V f VGS = 5.0V, ID = 43A e VDS = 25V, ID = 52A ID = 43A VDS = 44V VGS = 16V VGS = -16V VGS = 4.5V, ID = 30A e |
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