AP6C072M datasheet(2/10 Pages) A-POWER

tên linh kiện	AP6C072M

Giải thích chi tiết về linh kiện	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	10 Pages

Scroll/Zoom	100%

nhà sản xuất	A-POWER [Advanced Power Electronics Corp.]

Trang chủ	http://www.a-power.com.tw

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N-CH Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

VGS=10V, ID=5A

mΩ

VGS=5V, ID=3A

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=5A

IDSS

Drain-Source Leakage Current

VDS=48V, VGS=0V

IGSS

Gate-Source Leakage

VGS=+20V, VDS=0V

+100

Total Gate Charge

ID=3A

19.2

Qgs

Gate-Source Charge

VDS=30V

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

5.5

td(on)

Turn-on Delay Time

VDS=30V

Rise Time

ID=1A

td(off)

Turn-off Delay Time

RG=3.3Ω

-26

Fall Time

VGS=10V

Ciss

Input Capacitance

VGS=0V

1000 1600

Coss

Output Capacitance

VDS=25V

Crss

Reverse Transfer Capacitance

f=1.0MHz

Gate Resistance

f=1.0MHz

2.2

4.4

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

VSD

Forward On Voltage

IS=1.5A, VGS=0V

1.2

trr

Reverse Recovery Time

IS=5A, VGS=0V

13.5

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

Static Drain-Source On-Resistance

AP6C072M

RDS(ON)

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