©

1999, 2000

MOS FIELD EFFECT TRANSISTOR

2SK3296

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

Document No.

D14063EJ2V0DS00 (2nd edition)

Date Published

May 2001 NS CP(K)

Printed in Japan

DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

DESCRIPTION

The 2SK3296 is N-Channel MOS FET device that features a

low on-state resistance and excellent switching characteristics,

designed for low voltage high current applications such as

DC/DC converter with synchronous rectifier.

FEATURES

• 4.5 V drive available

• Low on-state resistance

• Low gate charge

• Built-in gate protection diode

• Surface mount device available

20

V

±20

V

±35

A

Drain Current (Pulse)

Note

±140

A

1.5

W

40

W

Channel Temperature

150

°C

Storage Temperature

−55 to +150

°C

Note PW

≤ 10

µs, Duty Cycle ≤ 1%

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3296

TO-220AB

2SK3296-S

TO-262

2SK3296-ZK

TO-263(MP-25ZK)

2SK3296-ZJ

TO-263(MP-25ZJ)

The mark

shows major revised points.