DMP6185SEQ-13 datasheet(2/6 Pages) DIODES

2 / 6 page

DMP6185SEQ

Document Number DS39536 Rev. 1 - 2

2 of 6

www.diodes.com

February 2017

DMP6185SEQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source voltage

VDSS

-60

Gate-Source voltage

VGS

20

Continuous Drain current (Note 7) VGS = -10V

TA = +25°C

-3

TA = +70°C

-2.4

Maximum Body Diode Continuous Current

-2

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

-15

Single Pulsed Avalanche Current (Note 8)

IAS

-16

Single Pulsed Avalanche Energy (Note 8)

EAS

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

TA = +25°C

1.2

TA = +70°C

0.8

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RθJA

104

°C/W

t<10s

Total Power Dissipation (Note 7)

TA = +25°C

2.2

TA = +70°C

1.4

Thermal Resistance, Junction to Ambient (Note 7)

Steady state

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 7)

RθJC

7.6

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

-60



VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current

IDSS



-1

µA

VDS = -48V, VGS = 0V

Gate-Source Leakage

IGSS



±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(th)

-1



-3

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS (ON)



110

150

VGS = -10V, ID = -2.2A

130

185

VGS = -4.5V, ID = -1.8A

Diode Forward Voltage

VSD



-0.75

-0.95

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Ciss



708



VDS = -30V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss



Reverse Transfer Capacitance

Crss



Gate Resistance



VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -4.5V)



6.2



VDS = -30V, ID = -12A

Total Gate Charge (VGS = -10V)



Gate-Source Charge

Qgs



2.8



Gate-Drain Charge

Qgd



3.1



Turn-On Delay Time

tD(on)



5.2



VDS = -30V, RL = 2.5Ω

VGS = -10V, RG = 3Ω

Turn-On Rise Time



Turn-Off Delay Time

tD(off)



Turn-Off Fall Time



Body Diode Reverse Recovery Time

trr



IF = -12A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

Qrr



Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

8. UIS in production with L = 0.1mH, starting TA = +25°C.

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

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