PMEG2005EB datasheet(3/8 Pages) PHILIPS

3 / 8 page

2003 Dec 03

Philips Semiconductors

Product speciﬁcation

20 V, 1 A ultra low VF MEGA Schottky

barrier rectiﬁer in SOD523 package

PMEG2010AEB

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power

losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses

PR and IF(AV) rating will be available on request.

THERMAL CHARACTERISTICS

Notes

1. Refer to SOD523 (SC-79) standard mounting conditions.

2. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power

losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses

PR and IF(AV) rating will be available on request.

3. Solder point of cathode tab.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

continuous forward current

Ts ≤ 55 °C

−

1.0

IFRM

repetitive peak forward current

tp ≤ 1 ms; δ≤ 0.5

−

3.5

IFSM

non-repetitive peak forward current

t = 8 ms square wave

−

Tstg

storage temperature

−65

+150

°C

junction temperature

note 1

−

150

°C

Tamb

operating ambient temperature

note 1

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to

ambient

in free air; notes 1 and 2

400

K/W

Rth(j-s)

thermal resistance from junction to

soldering point

notes 2 and 3

K/W

PMEG2005EB bảng dữ liệu(PDF) 3 Page - NXP Semiconductors

PMEG2005EB bảng dữ liệu(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL