DMP2021UTS-13 datasheet(2/7 Pages) DIODES

2 / 7 page

DMP2021UTS

Document number: DS39575 Rev. 2 - 2

2 of 7

www.diodes.com

July 2017

DMP2021UTS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-20

Gate-Source Voltage

VGSS

±10

Continuous Drain Current (Note 6) VGS = -4.5V

Steady

State

TA = +25°C

TA = +70°C

-7.4

-5.9

Steady

State

TC = +25°C

TC = +70°C

-18

-14

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

Continuous Source-Drain Diode Current (Note 6)

TA = +25°C

Pulsed Source-Drain Diode Current (10

μs Pulse, Duty Cycle = 1%)

ISM

Avalanche Current (Note 7) L = 0.1mH

IAS

Avalanche Energy (Note 7) L = 0.1mH

EAS

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

0.9

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

146

°C/W

Total Power Dissipation (Note 6)

TA = +25°C

1.3

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

°C/W

Thermal Resistance, Junction to Case (Note 6)

Steady State

RJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-20

—

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

-1

µA

VDS = -20V, VGS = 0V

Gate-Source Leakage

IGSS

—

±10

µA

VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

-0.35

—

-1.0

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS(ON)

—

VGS = -4.5V, ID = -4.5A

VGS = -2.5V, ID = -4.5A

VGS = -1.8V, ID = -2.5A

Diode Forward Voltage

VSD

—

-0.8

-1.2

VGS = 0V, IS = -1.0A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

2,760

—

VDS = -15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

262

—

Reverse Transfer Capacitance

Crss

—

220

—

Gate Resistance

—

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -4.5V)

—

VDS = -15V, ID = -4.0A

Total Gate Charge (VGS = -8V)

—

Gate-Source Charge

Qgs

—

3.5

—

Gate-Drain Charge

Qgd

—

8.3

—

Turn-On Delay Time

tD(ON)

—

7.5

—

VDS = -15V, VGS = -4.5V,

RG = 1Ω, ID = -4.0A

Turn-On Rise Time

—

Turn-Off Delay Time

tD(OFF)

—

125

—

Turn-Off Fall Time

—

Reverse Recovery Time

tRR

—

IF = -1.0A, di/dt = 100A/μs

Reverse Recovery Charge

QRR

—

IF = -1.0A, di/dt = 100A/μs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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