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DMNH4015SSDQ bảng dữ liệu(PDF) 2 Page - Diodes Incorporated

tên linh kiện DMNH4015SSDQ
Giải thích chi tiết về linh kiện  DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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DMNH4015SSDQ
Document number: DS38095 Rev. 2 - 2
2 of 6
www.diodes.com
August 2016
© Diodes Incorporated
DMNH4015SSDQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 7) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
8.6
6.9
A
t<10s
TA = +25°C
TA = +70°C
ID
11.0
8.8
A
Maximum Body Diode Forward Current (Note 7)
IS
2.2
A
Pulsed Drain Current (380µs pulse, duty cycle = 1%)
IDM
80
A
Avalanche Current (Note 8) L = 0.1mH
IAS
25
A
Avalanche Energy (Note 8) L = 0.1mH
EAS
33
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
TA = +25°C
PD
1.4
W
TA = +70°C
0.9
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
RθJA
111
°C/W
t<10s
66
Total Power Dissipation (Note 7)
TA = +25°C
PD
2.0
W
TA = +70°C
1.2
Thermal Resistance, Junction to Ambient (Note 7)
Steady state
RθJA
75
°C/W
t<10s
45
Thermal Resistance, Junction to Case (Note 7)
RθJC
10.4
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BVDSS
40
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS


1
µA
VDS = 40V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(TH)
1
3
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
10
15
m
Ω
VGS = 10V, ID = 12A
12
20
VGS = 4.5V, ID = 10A
Diode Forward Voltage
VSD
0.7
1.0
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
1,938
-
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
156
-
Reverse Transfer Capacitance
Crss
126
-
Gate Resistance
RG

1.8
3.2
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Qg
15
-
nC
VDS = 15V, ID = 12A
Total Gate Charge (VGS = 10V)
Qg

33
-
Gate-Source Charge
Qgs
4.4
-
Gate-Drain Charge
Qgd
5.9
-
Turn-On Delay Time
tD(on)
4.4
-
nS
VDD = 15V, VGS = 10V,
RL = 1.25Ω, RG = 3Ω,
Turn-On Rise Time
tr
10.5
-
Turn-Off Delay Time
tD(off)
12.3
-
Turn-Off Fall Time
tf

5.7
-
Body Diode Reverse Recovery Time
trr

11

nS
IS = 12A, dI/dt = 500A/μs
Body Diode Reverse Recovery Charge
Qrr

7.6

nC
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.



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