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QID4520002 bảng dữ liệu(PDF) 5 Page - Powerex Power Semiconductors

tên linh kiện QID4520002
Giải thích chi tiết về linh kiện  Dual IGBT
PDF  6 Pages
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nhà sản xuất  POWEREX [Powerex Power Semiconductors]
Trang chủ  http://www.pwrx.com
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QID4520002 bảng dữ liệu(HTML) 5 Page - Powerex Power Semiconductors

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QID4520002
Dual IGBT HVIGBT Module
200 Amperes/4500 Volts
5
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Preliminary
11/14 Rev. 3
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
COLLECTOR-EMITTER VOLTAGE, V
CE, (VOLTS)
CAPACITANCE VS. VCE
(TYPICAL)
100
102
166.0
16.6
1.66
0.165
101
VGE = 0V
Tj = 25°C
f = 100 kHz
Cies
Coes
Cres
0
165.0
82.5
247.5 330.0 412.5
10-1
GATE CHARGE, Q
G, (C)
GATE CHARGE VS. VGE
20
0
5
10
15
0
-5
-10
-15
0.825
3.30
2.48
1.65
VCE = 2800V
IC = 200A
Tj = 25°C
COLLECTOR CURRENT, I
C, (AMPERES)
2.66
0.33
0.66
1.00
1.33
1.66
2.00
2.33
0
VCC = 2800V
VGE = ±15V
RG(on) = 16.2
RG(off) = 60
Ls = 150nH
Tj = 125°C
Inductive Load
HALF-BRIDGE
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
Eon
Eoff
Erec
COLLECTOR EMITTER VOLTAGE, V
CES, (VOLTS)
500
416
333
250
166
83
0
2000
1000
3000
0
REVERSE BIAS SAFE
OPERATING AREA (RBSOA)
VCC ≤ 3200V
VGE = ±15V
RG(off) = 60
Tj = 125°C
5000
4000



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