MMBTA06 datasheet(1/2 Pages) DIOTEC

tên linh kiện	MMBTA06

Giải thích chi tiết về linh kiện	SMD High Voltage NPN Transistors

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nhà sản xuất	DIOTEC [Diotec Semiconductor]

Trang chủ	http://www.diotec.com

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MMBTA06

SMD High Voltage NPN Transistors

SMD Hochspannungs-NPN-Transistoren

IC

= 500 mA

hFE > 100

Tjmax = 150°C

VCEO = 80 V

Ptot = 250 mW

Version 2018-01-18

SOT-23

(TO-236)

1 = B

2 = E

3 = C

Dimensions - Maße [mm]

Typical Applications

Signal processing,

Switching, Amplification

Commercial grade 1)

Typische Anwendungen

Signalverarbeitung,

Schalten, Verstärken

Standardausführung 1)

Features

General Purpose

Compliant to RoHS, REACH,

Conflict Minerals 1)

Besonderheiten

Universell anwendbar

Konform zu RoHS, REACH,

Konfliktmineralien 1)

Mechanical Data 1)

Mechanische Daten 1)

Taped and reeled

3000 / 7“

Gegurtet auf Rolle

Weight approx.

0.01 g

Gewicht ca.

Case material

UL 94V-0

Gehäusematerial

Solder & assembly conditions

260°C/10s

Löt- und Einbaubedingungen

MSL = 1

Type

Code

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

1GM

MMBTA56

Maximum ratings 2)

Grenzwerte 2)

Collector-Emitter-voltage – Kollektor-Emitter-Spannung

B open

VCEO

80 V

Collector-Base-voltage – Kollektor-Basis-Spannung

E open

VCBO

80 V

Emitter-Base-voltage – Emitter-Basis-Spannung

C open

VEBO

4 V

Power dissipation – Verlustleistung

Ptot

250 mW 3)

Collector current – Kollektorstrom

DC

IC

500 mA

Base current – Basisstrom

I

B

100 mA

Peak Base current – Basis-Spitzenstrom

IBM

200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj

TS

-55...+150°C

-55…+150°C

Characteristics

Kennwerte

Tj = 25°C

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis 4)

- VCE = 1 V

- IC = 10 mA

- IC = 100 mA

hFE

100

–

1

Please note the detailed information on our website or at the beginning of the data book

Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches

2

TA = 25°C and per diode, unless otherwise specified – TA = 25°C und pro Diode, wenn nicht anders angegeben

3

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

4

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

1

Pb

RoHS

1.1

+0.1

0.4+0.1

2.9 ±0.1

1

2

3

Type

Code

1.9±0.1

-0.05

-0.2

Số phần tương tự - MMBTA06

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Transys Electronics	MMBTA06	139Kb / 1P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Samsung semiconductor	MMBTA06	28Kb / 1P	NPN (DRIVER TRANSISTOR)
Fairchild Semiconductor	MMBTA06	149Kb / 4P	NPN General Purpose Amplifier
Diodes Incorporated	MMBTA06	45Kb / 2P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30037 Rev. C-2
General Semiconductor	MMBTA06	56Kb / 2P	Small Signal Transistors (NPN)

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