IPS031G/IPS032G

2

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(1) Limited by junction temperature (pulsed current limited also by internal wiring)

31

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-

erenced to SOURCE lead. (TAmbient = 25

µm

copper thickness. All Sources leads of each mosfet must be connected together to get full current capability

Symbol Parameter

Min.

Max.

Units

Test Conditions

Vds

Maximum drain to source voltage

—

47

Vin

Maximum input voltage

-0.3

7

Iin, max

Maximum IN current

-10

+10

mA

—

1.4

—

2

—15

Pd

Maximum power dissipation

(1)

—

1

W

—

1.5

ESD1

—

4

C=100pF, R=1500

Ω,

ESD2

—

0.5

C=200pF, R=0

Ω, L=10µH

T stor.

Max. storage temperature

-55

150

Tj max.

Max. junction temperature

-40

150

V

A

kV

Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Rth1

Thermal resistance with standard footprint

—

100

—

Rth2

Thermal resistance with 1" square footprint

—

65

—

Rth1

Thermal resistance with standard footprint

(2 mos on)

(2 mosfets on)

—

85

—

Rth2

Thermal resistance with standard footprint

(1 mos on)

(1 mosfet on)

—

100

—

Rth3

Thermal resistance with 1" square footprint

(2 mos on)

(2 mosfets on)

—

60

—

Thermal Chacteristics

SOIC-8

SOIC-16