DMN60H080DS-7 datasheet(2/7 Pages) DIODES

2 / 7 page

DMN60H080DS

Document number: DS39475 Rev. 3 - 2

2 of 7

www.diodes.com

May 2017

DMN60H080DS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

600

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 5) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

Continuous Drain Current (Note 5) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

Continuous Drain Current (Note 6) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

Pulsed Drain Current @ TSP = +25°C (Note 7)

IDM

0.2

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation, @TA = +25°C (Note 5)

0.70

Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5)

RθJA

174

°C/W

Power Dissipation, @TA = +25°C (Note 6)

1.10

Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 6)

RθJA

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

600

—

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

µA

VDS = 600V, VGS = 0V

Gate-Body Leakage

IGSS

—

±10

µA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.5

—

3.0

VDS = VGS, ID = 250µA

1.5

—

2.6

VDS = VGS, ID = 8µA

Static Drain-Source On-Resistance

RDS(ON)

—

100

VGS = 10V, ID = 60mA

—

290

VGS = 4.5V, ID = 60mA

Forward Transfer Admittance

|Yfs|

—

VDS = 10V, ID = 60mA

Diode Forward Voltage

VSD

—

1.5

VGS = 0V, IS = 50mA

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

VDS = 25V, VGS = 0V, f = 1.0MHz

Output Capacitance

Coss

—

5.2

—

Reverse Transfer Capacitance

Crss

—

1.4

—

Total Gate Charge

—

1.7

—

VGS = 10V, VDD = 300V,

ID = 0.01A

Gate-Source Charge

Qgs

—

0.3

—

Gate-Drain Charge

Qgd

—

0.9

—

Turn-On Delay Time

tD(ON)

—

VDD = 300V, VGS = 10V,

RGEN = 3.3Ω,

ID = 60mA

Turn-On Rise Time

—

Turn-Off Delay Time

tD(OFF)

—

Turn-Off Fall Time

—

158

—

Reverse Recovery Time

tRR

—

189.1

—

VR =300V, IF =0.06A,

di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

DMN60H080DS-7 bảng dữ liệu(PDF) 2 Page - Diodes Incorporated

DMN60H080DS-7 bảng dữ liệu(HTML) 2 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL