DMN3110LCP3-7 datasheet(2/7 Pages) DIODES

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DMN3110LCP3

Document number: DS38546 Rev. 3 - 2

2 of 7

www.diodes.com

January 2017

DMN3110LCP3

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

Continuous Drain Current (Note 5) VGS = 8V

Steady

State

TA = +25°C

TA = +70°C

3.2

2.5

Continuous Drain Current (Note 5) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

3.0

2.4

Pulsed Drain Current (Note 6)

IDM

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 7)

0.5

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7)

RθJA

250

°C/W

Power Dissipation (Note 5)

1.38

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)

RθJA

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

100

VDS = 24V, VGS = 0V

Gate-Source Leakage

IGSS

—

VGS = 10V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

0.65

0.8

1.1

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

mΩ

VGS = 8V, ID =0.5A

—

VGS = 4.5V, ID =0.5A

—

110

VGS = 2.5V, ID = 0.5A

—

110

160

VGS = 1.8V, ID = 0.5A

Forward Transfer Admittance

|Yfs|

—

3.3

—

VDS = 15V, ID = 0.5A

Diode Forward Voltage

VSD

—

0.7

0.9

VGS = 0V, IS = 0.5A

Reverse Recovery Charge

QRR

—

1.7

—

VDD = 15V, IF = 0.5A,

di/dt =3

00A/μs

Reverse Recovery Time

tRR

—

5.2

—

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

110

150

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

Reverse Transfer Capacitance

Crss

—

4.3

Series Gate Resistance

—

f=1MHz,VGS=0V, VDS=0V

Total Gate Charge

—

1,090

1,520

VGS = 4.5V, VDS = 15V,

ID =0.5A

Gate-Source Charge

Qgs

—

130

—

Gate-Drain Charge

Qgd

—

130

—

Gate Charge at VTH

Qg(TH)

—

110

—

Turn-On Delay Time

tD(ON)

—

4.8

VDS = 15V, VGS = 4.5V,

Rg = 2Ω, ID = 0.5A

Turn-On Rise Time

—

2.8

—

Turn-Off Delay Time

tD(OFF)

—

16.5

Turn-Off Fall Time

—

9.5

—

Notes:

5. Device mounted on FR-4 material with 1inch

2 (6.45cm2), 2oz. (0.071mm thick) Cu.

6. Repetitive rating, pulse width limited by junction temperature.

7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

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