TSM085P03CS datasheet(1/6 Pages) TSC

tên linh kiện	TSM085P03CS

Giải thích chi tiết về linh kiện	P-Channel Power MOSFET

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TSM085P03CS

Taiwan Semiconductor

1

Version: A1703

P-Channel Power MOSFET

-30V, -34A, 8.5m

Ω

FEATURES

● Low R

DS(ON) to minimize conductive losses

● Low gate charge for fast power switching

● 100% UIS and R

g tested

● Compliant to RoHS directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● DC-DC Converters

● Battery Power Management

● Load Switch

● BLDC Motor Drives

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

VDS

-30

V

RDS(on) (max)

VGS = -10V

8.5

m

Ω

VGS = -4.5V

14

Qg

28

nC

SOP-8

Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T

A = 25°C unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

(Note 1)

TC = 25°C

ID

-34

A

TA = 25°C

-13

Pulsed Drain Current

IDM

-136

A

Single Pulse Avalanche Current

(Note 2)

IAS

-23

A

Single Pulse Avalanche Energy

(Note 2)

EAS

79

mJ

Total Power Dissipation

TC = 25°C

PD

14

W

TC = 125°C

2.8

Total Power Dissipation

TA = 25°C

PD

2.2

W

TA = 125°C

0.4

Operating Junction and Storage Temperature Range

TJ, TSTG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction to Case Thermal Resistance

RӨJC

9

°C/W

Junction to Ambient Thermal Resistance

RӨJA

57

°C/W

Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is

determined by the user’s board design.

Số phần tương tự - TSM085P03CS

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