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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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TSM60NB190CF bảng dữ liệu(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM60NB190CF bảng dữ liệu(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page  TSM60NB190CF Taiwan Semiconductor 1 Version: A1612 N-Channel Power MOSFET 600V, 18A, 0.19 Ω FEATURES ● Super-Junction technology ● High performance, small R DS(ON)*Qg figure of merit (FOM) ● High ruggedness performance ● 100% UIS and R g tested ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Power Supply ● AC/DC LED Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 0.19 Ω Qg 32 nC ITO-220S ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current (Note 1) TC = 25°C ID 18 A TC = 100°C 11 A Pulsed Drain Current (Note 2) IDM 54 A Total Power Dissipation @ TC = 25°C PD 59.5 W Single Pulse Avalanche Energy (Note 3) EAS 441 mJ Single Pulse Avalanche Current (Note 3) IAS 4.2 A Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 2.1 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. |
Số phần tương tự - TSM60NB190CF |
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Mô tả tương tự - TSM60NB190CF |
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