TPC817 datasheet(2/10 Pages) TSC

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TPC817 SERIES

Taiwan Semiconductor

Version:C1612

ABSOLUTE MAXIMUM RATINGS (T

A = 25°C unless otherwise noted)

PARAMETER

SYMBOL

PART NUMBER

UNIT

Input

Forward current

Reverse voltage

Power dissipation

Output

Collector-emitter voltage

VCEO

Emitter-collector voltage

VECO

Collector current

Collector power dissipation

150

Total power dissipation

Ptot

200

Isolation voltage

Viso

5000

Vrms

Rated impulse isolation voltage

VIOTM

6000

Rated repetitive peak isolation voltage

VIORM

630

Operating temperature

Topr

-40 to +100

°C

Storage temperature

Tstg

-55 to +125

°C

Soldering temperature

Tsol

260

°C

ELECTRICAL SPECIFICATIONS (T

A = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Input

Forward voltage

IF=20mA

1.2

1.4

Reverse current

VR=4V

μA

Terminal capacitance

V=0, f=1kHz

250

Output

Collector dark current

VCE=20V,IF=0

ICEO

-7

Collector-emitter

breakdown voltage

IC=0.1mA, IF=0

BVCEO

Emitter-collector

breakdown voltage

IE=10μA, IF=0

BVECO

Transfer

Characteristics

Collector current

IF=5mA, VCE=5V

2.5

Current transfer

ration(Note 1)

CTR

600

Collector-emitter

saturation voltage

IF=20mA, IC=1mA

VCE(sat)

0.1

0.2

Isolation resistance

DC500V,

40 to 60%RH

RISO

5x10

Floating capacitance

V=0, f=1MHz

0.6

1.0

Cut-off frequency

VCE=5V, IC=2mA,

RL=100Ω, -3dB

KHz

Response

time

Rise time

VCE=2V, IC=2mA,

RL=100Ω

μs

Fall time

μs

Notes:

Classification table of current transfer ratio is shown below

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