TSM2NB60CP datasheet(2/9 Pages) TSC

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TSM2NB60CP

TSM2NB60CH

Taiwan Semiconductor

Document Number: DS_P0000070

Version: H1706

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction to Case Thermal Resistance

RӨJC

2.87

oC/W

Junction to Ambient Thermal Resistance

RӨJA

110

oC/W

Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined

at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board

design. RӨJA shown below for single device operation on FR-4 PCB in still air

ELECTRICAL SPECIFICATIONS (T

A = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

(Note 5)

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

600

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

2.5

3.6

4.5

Gate Body Leakage

VGS = ±30V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = 600V, VGS = 0V

IDSS

Drain-Source On-State Resistance

VGS = 10V, ID = 1A

RDS(ON)

3.9

4.4

Forward Transfer Conductance

VDS = 40V, ID = 1A

gfs

1.5

Dynamic

(Note 6)

Total Gate Charge

VDS = 480V, ID = 2A,

VGS = 10V

9.4

Gate-Source Charge

Qgs

2.2

Gate-Drain Charge

Qgd

4.7

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

Ciss

249

Output Capacitance

Coss

30.7

Reverse Transfer Capacitance

Crss

Gate Resistance

F = 1MHz, open drain

8.5

Switching

(Note 7)

Turn-On Delay Time

VGS = 10V, ID = 2A,

VDD = 300V, RG =25Ω

td(on)

9.1

Turn-On Rise Time

9.8

Turn-Off Delay Time

td(off)

17.4

Turn-Off Fall Time

12.4

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