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SST11CP15 bảng dữ liệu(PDF) 6 Page - Microchip Technology |
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SST11CP15 bảng dữ liệu(HTML) 6 Page - Microchip Technology |
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6 / 18 page ![]() ©2013 Silicon Storage Technology, Inc. DS70005016C 08/13 6 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15 Data Sheet Electrical Specifications The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and current specifications. Refer to Figures 3 through 12 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con- ditions may affect device reliability.) Supply Voltage at pins 2, 10, 11, 12 (VCC)................................... -0.3V to +5.5V DC supply current (ICC) ...................................................... 500mA Operating Temperature (TA) ............................................. -20ºC to +85ºC Storage Temperature (TSTG) ........................................... -40ºC to +120ºC Maximum Junction Temperature (TJ) ............................................ +150ºC Maximum Output Power...................................................... 27dBm Surface Mount Solder Reflow Temperature ............................ 260°C for 10 seconds Table 2: Operating Range Range Ambient Temp VCC Industrial -10°C to +85°C 3.3V-5.0V T2.1 75016 Table 3: DC Electrical Characteristics Symbol Parameter Min. Typ Max. Unit VCC Supply Voltage at pins 2, 10, 11, 12 2.7 3.3 5.0 V ICC Supply Current @ POUT =18dBm VCC = 3.3V 220 mA VCC = 4.2V 240 mA VCC = 5.0V 290 mA ICQ VCC quiescent current VCC = 3.3V 135 mA VCC = 4.2V 170 mA VCC = 5.0V 175 mA IOFF Shut down current 1.0 10 µA VREG Reference Voltage for recommended application 2.85 V T3.0 75016 |
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