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KBPC5001FP bảng dữ liệu(PDF) 2 Page - Diotec Semiconductor

tên linh kiện KBPC5001FP
Giải thích chi tiết về linh kiện  Single Phase Bridge Rectifier
PDF  2 Pages
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nhà sản xuất  DIOTEC [Diotec Semiconductor]
Trang chủ  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

KBPC5001FP bảng dữ liệu(HTML) 2 Page - Diotec Semiconductor

  KBPC5001FP_17 Datasheet HTML 1Page - Diotec Semiconductor KBPC5001FP_17 Datasheet HTML 2Page - Diotec Semiconductor  
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KBPC5001FP ... KBPC5012FP
Maximum ratings 1)
Grenzwerte 1)
Max. rectified output current at forced cooling
Dauergrenzstrom am Brückenausgang bei forcierter Kühlung
R-load
C-load
TC = 50°C 2)
IFAV
50 A
46 A
Repetitive peak forward current – Periodischer Spitzenstrom
f > 15 Hz
TC = 50°C 2)
IFRM
90 A
Peak forward surge current (half sine-wave)
Stoßstrom in Fluss-Richtung (Sinus-Halbwelle)
50 Hz (10 ms)
60 Hz (8.3 ms)
IFSM
400 A
450 A
Rating for fusing – Grenzlastintegral
t < 10 ms
i2t
800 A2s
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Admissible mounting torque
Zulässiges Anzugsdrehmoment
10-32 UNF
M5
18 ± 10% lb.in.
2 ± 10% Nm
Characteristics
Kennwerte
Forward voltage – Durchlass-Spannung
Tj = 25°C
IF = 25 A
VF
< 1.1 V 3)
Leakage current – Sperrstrom
Tj = 25°C
VR = VRRM
IR
< 10 µA 3)
Isolation voltage terminals to case
Isolationsspannung Anschlüsse zum Gehäuse
VISO
> 2500 VRMS 2)
Reverse recovery time
Sperrverzug
IF = 0.5 A through/über
IR = 1 A to IR = 0.25 A
trr
typ. 1500 ns 3)
Typical junction capacitance – Typische Sperrschichtkapazität
VR = 4 V
Cj
185 pF 3)
Thermal resistance junction to case (per device)
Wärmewiderstand Sperrschicht – Gehäuse (pro Bauteil)
RthC
< 1.2 K/W 2)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder oder Internet
1
TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben
2
“Case” designates metal baseplate – „Gehäuse“ bezeichnet die metallische Bodenplatte
3
Valid per diode – Gültig pro Diode
2
http://www.diotec.com/
© Diotec Semiconductor AG
Rated forward current versus ambient temperature )
Zul. Richtstrom in Abh. von der Umgebungstemp. )
1
1
I
FAV
[%]
120
100
80
60
40
20
0
[°C]
T
A
150
100
50
0
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
0.4
V
F
0.8
1.0
1.2
1.4
[V] 1.8
10
10
10
1
10
3
2
-1
[A]
I
F
T = 25°C
j
T = 125°C
j
400a-(25a-1,1v)



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