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T-65-R nhà phân phối |
| nhà phân phối | tên linh kiện | nhà sản xuất | Giải thích chi tiết về linh kiện | Price | Qty. BuyNow | |
![]() DigiKey | MOT65R380D | Advanced Fiber Resources (Wuhan) Ltd | MOSFET N-CH 650V 11A 0.35 To-252 |
| 2,500 | |
| IPT65R125CFD7XTMA1 | Infineon Technologies AG | HIGH POWER_NEW RoHS : Compliant |
| 1,940 | ||
| IPT65R125CFD7XTMA1 | Infineon Technologies AG | HIGH POWER_NEW RoHS : Compliant |
| 1,940 | ||
| IPT65R125CFD7XTMA1 | Infineon Technologies AG | HIGH POWER_NEW RoHS : Compliant |
| 1,940 | ||
| IGT65R140D2ATMA1 | Infineon Technologies AG | GANFET N-CH 650V 13A 8PSFN RoHS : Compliant |
| 1,631 | ||
| IGT65R140D2ATMA1 | Infineon Technologies AG | GANFET N-CH 650V 13A 8PSFN RoHS : Compliant |
| 1,631 | ||
| IGT65R140D2ATMA1 | Infineon Technologies AG | GANFET N-CH 650V 13A 8PSFN RoHS : Compliant |
| 1,631 | ||
| IMT65R050M2HXUMA1 | Infineon Technologies AG | SILICON CARBIDE MOSFET RoHS : Compliant |
| 1,448 | ||
| IMT65R050M2HXUMA1 | Infineon Technologies AG | SILICON CARBIDE MOSFET RoHS : Compliant |
| 1,448 | ||
| IMT65R050M2HXUMA1 | Infineon Technologies AG | SILICON CARBIDE MOSFET RoHS : Compliant |
| 1,448 | ||
| IMLT65R026M2HXTMA1 | Infineon Technologies AG | SILICON CARBIDE MOSFET RoHS : Compliant |
| 1,317 | ||
| IMLT65R026M2HXTMA1 | Infineon Technologies AG | SILICON CARBIDE MOSFET RoHS : Compliant |
| 1,317 | ||
| IMLT65R026M2HXTMA1 | Infineon Technologies AG | SILICON CARBIDE MOSFET RoHS : Compliant |
| 1,317 | ||
| MOT65R280F | Advanced Fiber Resources (Wuhan) Ltd | MOSFET N-CH 650V 15A 0.30 To-220 |
| 1,000 | ||
| MOT65R850F | Advanced Fiber Resources (Wuhan) Ltd | MOSFET N-CH 650V 4A 0.83 To-220F |
| 1,000 | ||
![]() Avnet Americas | IGOT65R035D2AUMA1 | Infineon Technologies AG | Gallium Nitride (GaN) Transistor, 650 V, 44 A, 42 Milliohms, 7.7 nC, SOIC, Surface Mount - Tape and Reel (Alt: IGOT65R035D2AUMA1) RoHS : Compliant |
| 10,400 | |
| IGT65R140D2ATMA1 | Infineon Technologies AG | Gallium Nitride (GaN) Transistor, 650 V, 13 A, 0.17 ohm, 1.8 nC, HSOF, 8 Pins, Surface Mount - Tape and Reel (Alt: IGT65R140D2ATMA1) RoHS : Compliant |
| 8,000 | ||
| IGLT65R035D2ATMA1 | Infineon Technologies AG | Gallium Nitride (GaN) Transistor, 650 V, 48 A, 0.042 ohm, 7.7 nC, HDSOP, 16 Pins, Surface Mount - Tape and Reel (Alt: IGLT65R035D2ATMA1) RoHS : Compliant |
| 5,400 | ||
| IMLT65R015M2HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET, Single, N Channel, 142 A, 650 V, 0.0132 ohm, HDSOP - Tape and Reel (Alt: IMLT65R015M2HXTMA1) RoHS : Compliant |
| 3,600 | ||
| IPT65R125CFD7XTMA1 | Infineon Technologies AG | Transistor MOSFET 650V 4-Pin TOLL - Tape and Reel (Alt: IPT65R125CFD7XTMA1) RoHS : Compliant |
| 2,000 | ||
| IPT65R080CFD7XTMA1 | Infineon Technologies AG | Transistor MOSFET 650V 4-Pin TOLL - Tape and Reel (Alt: IPT65R080CFD7XTMA1) RoHS : Compliant |
| 2,000 | ||
| IMT65R107M1HXUMA1 | Infineon Technologies AG | Silicon Carbide MOSFET, Single, N Channel, 26 A, 650 V, 0.141 Ohm, HSOF, 8 Pins - Tape and Reel (Alt: IMT65R107M1HXUMA1) RoHS : Compliant |
| 2,000 | ||
| IMT65R048M1HXUMA1 | Infineon Technologies AG | Silicon Carbide MOSFET, Single, N Channel, 50 A, 650 V, 0.064 Ohm, HSOF, 8 Pins - Tape and Reel (Alt: IMT65R048M1HXUMA1) RoHS : Compliant |
| 2,000 | ||
| IPT65R190CFD7XTMA1 | Infineon Technologies AG | Transistor MOSFET 650V 4-Pin TOLL - Tape and Reel (Alt: IPT65R190CFD7XTMA1) RoHS : Compliant |
| 2,000 | ||
| IMT65R030M1HXUMA1 | Infineon Technologies AG | Silicon Carbide MOSFET, Single, N Channel, 71 A, 650 V, 0.042 Ohm, HSOF, 8 Pins - Tape and Reel (Alt: IMT65R030M1HXUMA1) RoHS : Compliant |
| 2,000 | ||
| IMLT65R060M2HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET, Single, N Channel, 40 A, 650 V, 0.055 ohm, HDSOP - Tape and Reel (Alt: IMLT65R060M2HXTMA1) RoHS : Compliant |
| 1,800 | ||
| IGLT65R045D2ATMA1 | Infineon Technologies AG | Gallium Nitride (GaN) Transistor, 650 V, 37 A, 0.054 ohm, 6 nC, HDSOP, 16 Pins, Surface Mount - Tape and Reel (Alt: IGLT65R045D2ATMA1) RoHS : Compliant |
| 1,800 | ||
| IMLT65R050M2HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET, Single, N Channel, 47 A, 650 V, 0.062 Ohm, HDSOP, 16 Pins - Tape and Reel (Alt: IMLT65R050M2HXTMA1) RoHS : Compliant |
| 1,800 | ||
| IGOT65R025D2AUMA1 | Infineon Technologies AG | Gallium Nitride (GaN) Transistor, 650 V, 61 A, 30 Milliohms, 11 nC, SOIC, Surface Mount - Tape and Reel (Alt: IGOT65R025D2AUMA1) RoHS : Compliant |
| 800 | ||
| IGOT65R045D2AUMA1 | Infineon Technologies AG | Gallium Nitride (GaN) Transistor, 650 V, 35 A, 0.054 ohm, 6 nC, DSO, 20 Pins, Surface Mount - Tape and Reel (Alt: IGOT65R045D2AUMA1) RoHS : Compliant |
| 800 | ||
![]() Mouser Electronics | IGT65R025D2ATMA1 | Infineon Technologies AG | GaN FETs CoolGaN Transistor 650 V G5 RoHS : Compliant |
| 3,843 | |
| IMT65R060M2HXUMA1 | Infineon Technologies AG | SiC MOSFETs SILICON CARBIDE MOSFET RoHS : Compliant |
| 2,858 | ||
| IMT65R020M2HXUMA1 | Infineon Technologies AG | SiC MOSFETs SILICON CARBIDE MOSFET RoHS : Compliant |
| 1,900 | ||
| IMT65R033M2HXUMA1 | Infineon Technologies AG | SiC MOSFETs SILICON CARBIDE MOSFET RoHS : Compliant |
| 1,770 | ||
| IGLT65R035D2ATMA1 | Infineon Technologies AG | GaN FETs HV GAN DISCRETES RoHS : Compliant |
| 1,683 | ||
| IGT65R140D2ATMA1 | Infineon Technologies AG | GaN FETs CoolGaN Transistor 650 V G5 RoHS : Compliant |
| 1,518 | ||
| IGLT65R110D2ATMA1 | Infineon Technologies AG | GaN FETs HV GAN DISCRETES RoHS : Compliant |
| 1,482 | ||
| IGT65R045D2ATMA1 | Infineon Technologies AG | GaN FETs CoolGaN Transistor 650 V G5 RoHS : Compliant |
| 1,473 | ||
| IGLT65R045D2ATMA1 | Infineon Technologies AG | GaN FETs HV GAN DISCRETES RoHS : Compliant |
| 1,053 | ||
| IMLT65R033M2HXTMA1 | Infineon Technologies AG | SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling RoHS : Compliant |
| 909 | ||
| IMLT65R075M2HXTMA1 | Infineon Technologies AG | SiC MOSFETs SILICON CARBIDE MOSFET RoHS : Compliant |
| 814 | ||
| IGOT65R025D2AUMA1 | Infineon Technologies AG | GaN FETs HV GAN DISCRETES RoHS : Compliant |
| 752 | ||
| IPT65R025CM8XTMA1 | Infineon Technologies AG | MOSFETs 650V CoolMOS CM8 Power Transistor RoHS : Compliant |
| 720 | ||
| AFGB30T65RQDN | onsemi | IGBTs 650V/30A FS4 SCR IGBT D2PAK AUTOMOTIVE RoHS : Compliant |
| 664 | ||
| IMLT65R026M2HXTMA1 | Infineon Technologies AG | SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling RoHS : Compliant |
| 391 | ||
![]() Newark | IGT65R140D2XTMA1 | Infineon Technologies AG | GAN TRANSISTOR, 650V, 13A, HSOF; RoHS : Compliant |
| 1,990 | |
| IGT65R140D2XTMA1 | Infineon Technologies AG | GAN TRANSISTOR, 650V, 13A, HSOF; RoHS : Compliant |
| 1,990 | ||
| IPT65R125CFD7XTMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 23A, HSOF; RoHS : Compliant |
| 1,965 | ||
| IPT65R125CFD7XTMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 23A, HSOF; RoHS : Compliant |
| 1,965 | ||
| IGT65R045D2XTMA1 | Infineon Technologies AG | GAN TRANSISTOR, 650V, 38A, HSOF; RoHS : Compliant |
| 1,878 | ||
| IGT65R045D2XTMA1 | Infineon Technologies AG | GAN TRANSISTOR, 650V, 38A, HSOF; RoHS : Compliant |
| 1,878 | ||
| IGT65R140D2ATMA1 | Infineon Technologies AG | GAN TRANSISTOR, 650V, 13A, HSOF; RoHS : Compliant |
| 1,834 | ||
| IGT65R140D2ATMA1 | Infineon Technologies AG | GAN TRANSISTOR, 650V, 13A, HSOF; RoHS : Compliant |
| 1,834 | ||
| IMLT65R026M2HXTMA1 | Infineon Technologies AG | SIC MOSFET, N-CHANNEL, 650V, 82A, HDSOP; RoHS : Compliant |
| 1,783 | ||
| IMLT65R026M2HXTMA1 | Infineon Technologies AG | SIC MOSFET, N-CHANNEL, 650V, 82A, HDSOP; RoHS : Compliant |
| 1,783 | ||
| IPT65R080CFD7XTMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 34A, HSOF; RoHS : Compliant |
| 1,770 | ||
| IPT65R080CFD7XTMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 34A, HSOF; RoHS : Compliant |
| 1,770 | ||
| IPT65R155CFD7XTMA1 | Infineon Technologies AG | MOSFET, N-CH, 650V, 19A, HSOF; RoHS : Compliant |
| 195 | ||
| IMLT65R015M2HXTMA1 | Infineon Technologies AG | SIL CARB MOSFET, SINGLE, N CHANNEL, 142A; RoHS : Compliant |
| 120 | ||
| IMLT65R015M2HXTMA1 | Infineon Technologies AG | SIL CARB MOSFET, SINGLE, N CHANNEL, 142A; RoHS : Compliant |
| 120 | ||
![]() RS | RK 4.21T-65-RS 4.21T (U-12443) | TURCK Inc | CORDSET, RK 4.21T-65-RS 4.21T, U-12443 |
| 0 | |
| RK 4.4T-6.5-RS 4.4T/S90 (U-04742) | TURCK Inc | CORDSET, RK 4.4T-6.5-RS 4.4T/S90, U-04742 |
| 0 | ||
| RKSV 4.4T-6.5-RSSV 4.4T (U-09190) | TURCK Inc | CORDSET, RKSV 4.4T-6.5-RSSV 4.4T, U-09190 |
| 0 | ||
![]() Bisco Industries | S71T6-5-R-BL | Birtcher Products | 4 | |||
![]() Onlinecomponents.com | MMI-BR1-65-R-T | Adam Technologies Inc | Push Pull Connector - Cable Bend Relief for Plug Size 0 Red - Plastic Bag RoHS : Compliant |
| 0 | |
| S02-10-R-90-65-T | TE Connectivity | S02-10-R-90-65-T |
| 0 | ||
![]() Rochester Electronics | AFGB30T65RQDN | onsemi | IGBT-Single 650V 68A 235.48W TO-263-3 T/R RoHS : Compliant |
| 4,188 | |
| IMLT65R015M2HXTMA1 | Infineon Technologies AG | CoolSiC MOSFET 650 V G2 RoHS : Compliant |
| 22 | ||
| IMLT65R020M2HXTMA1 | Infineon Technologies AG | CoolSiC MOSFET 650 V G2 RoHS : Compliant |
| 22 | ||
| IMLT65R026M2HXTMA1 | Infineon Technologies AG | IMLT65R026M2HXTMA1 RoHS : Compliant |
| 1,800 | ||
| IMLT65R033M2HXTMA1 | Infineon Technologies AG | IMLT65R033M2HXTMA1 RoHS : Compliant |
| 1,800 | ||
| IMT65R083M1HXUMA1 | Infineon Technologies AG | IMT65R - SILICON CARBIDE MOSFET RoHS : Compliant |
| 4,572 | ||
| IMT65R163M1HXUMA1 | Infineon Technologies AG | IMT65R - SILICON CARBIDE MOSFET RoHS : Compliant |
| 403 | ||
| IPT65R033G7XTMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 69A I(D), 650V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 1,295 | ||
| IPT65R060CFD7XTMA1 | Infineon Technologies AG | IPT65R060CFD7 - HIGH POWER_NEW RoHS : Compliant |
| 2,000 | ||
| IPT65R080CFD7XTMA1 | Infineon Technologies AG | IPT65R080CFD7 - HIGH POWER_NEW RoHS : Compliant |
| 993 | ||
| IPT65R099CFD7XTMA1 | Infineon Technologies AG | IPT65R099CFD7 - HIGH POWER_NEW RoHS : Compliant |
| 1,959 | ||
| IPT65R105G7XTMA1 | Infineon Technologies AG | Power Field-Effect Transistor RoHS : Compliant |
| 862 | ||
| IPT65R125CFD7XTMA1 | Infineon Technologies AG | MOSFET N-Channel 650V 8-SFN T/R RoHS : Compliant |
| 2,997 | ||
| IPT65R190CFD7XTMA1 | Infineon Technologies AG | IPT65R190CFD7 - HIGH POWER_NEW RoHS : Compliant |
| 4,446 | ||
| IPT65R195G7XTMA1 | Infineon Technologies AG | Power Field-Effect Transistor RoHS : Compliant |
| 176,392 | ||
![]() TME | KT65R-QD | Pneumatic Components Limited (PCL) | Sensor: reed switch; piston position; 100mA; 5÷240VDC; 5÷240VAC |
| 14 | |
| KT65R-5M | Pneumatic Components Limited (PCL) | Sensor: reed switch; piston position; 100mA; 5÷240VDC; 5÷240VAC |
| 7 | ||
| IGLT65R045D2ATMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IGOT65R025D2AUMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IMT65R083M1HXUMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IPT65R060CFD7XTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IMLT65R040M2HXTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| AFGHL50T65RQDN | onsemi | Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry RoHS : Compliant |
| 0 | ||
| IGOT65R055D2AUMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IMT65R057M1HXUMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IPT65R080CFD7XTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IPT65R155CFD7XTMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IPT65R040CM8XTMA1 | Infineon Technologies AG | Transistor: N-MOSFET; 650V; 67A; 390W; PG-HSOF-8 |
| 0 | ||
| IMT65R107M1HXUMA1 | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| IPT65R018CM8XTMA1 | Infineon Technologies AG | Transistor: N-MOSFET; 650V; 134A; 694W; PG-HSOF-8 |
| 0 | ||
![]() Richardson RFPD | AFGB40T65RQDN | onsemi | Trans IGBT Chip N-CH 650V 68A 339.37W 3-Pin(2+Tab) RoHS : Compliant | 0 | ||
| AFGHL40T65RQDN | onsemi | IGBT - 650 V 40 A - Short circuit rated FS4 Automo RoHS : Compliant | 0 | |||
| AFGHL30T65RQDN | onsemi | IGBT 650 V 30 A Short circuit rated FS4 Automotive RoHS : Compliant | 0 | |||
![]() Rutronik | IMT65R033M2HXUMA1 | Infineon Technologies AG | N-CH 650V 68A 33mOhm at 15V HSOF-8 RoHS : Compliant |
| 4,000 | |
| IMT65R050M2HXUMA1 | Infineon Technologies AG | N-CH 650V 48,1A 65mOhm at 15V HSOF-8 RoHS : Compliant |
| 4,000 | ||
| IMLT65R050M2HXTMA1 | Infineon Technologies AG | N-CH 650V 47A 50mOhm at 18V HDSOP-16 RoHS : Compliant |
| 3,600 | ||
| IMLT65R026M2HXTMA1 | Infineon Technologies AG | N-CH 650V 82A 34mOhm at 15V HDSOP-16 RoHS : Compliant |
| 3,600 | ||
| IMLT65R015M2HXTMA1 | Infineon Technologies AG | N-CH 650V 142A 14.5mOhm at 18V HDSOP-16 RoHS : Compliant |
| 1,800 | ||
| IMLT65R020M2HXTMA1 | Infineon Technologies AG | N-CH 650V 107A 20mOhm at 18V HDSOP-16 RoHS : Compliant |
| 1,800 | ||
| IGLT65R055D2ATMA1 | Infineon Technologies AG | N-CH 650V 60A 66mOhm HDSOP-16 RoHS : Compliant |
| 180 | ||
| IGLT65R025D2AUMA1 | Infineon Technologies AG | N-CH 650V 67A 25mOhm HDSOP-16 RoHS : Compliant |
| 110 | ||
| IGOT65R025D2AUMA1 | Infineon Technologies AG | N-CH 650V 61A 25mOhm DSO-20 RoHS : Compliant |
| 80 | ||
| IGOT65R035D2AUMA1 | Infineon Technologies AG | N-CH 650V 44A 35mOhm DSO-20 RoHS : Compliant |
| 80 | ||
| IGOT65R045D2AUMA1 | Infineon Technologies AG | N-CH 650V 34A 45mOhm DSO-20 RoHS : Compliant |
| 80 | ||
| IGOT65R055D2AUMA1 | Infineon Technologies AG | N-CH 650V 12A 55mOhm DSO-20 RoHS : Compliant |
| 80 | ||
| IMLT65R075M2HXTMA1 | Infineon Technologies AG | N-CH 650V 34.7A 68mOhm at 20V HDSOP-16 RoHS : Compliant |
| 25 | ||
| IGLT65R035D2ATMA1 | Infineon Technologies AG | N-CH 650V 47A 35mOhm HDSOP-16 RoHS : Compliant |
| 1 | ||
| IGLT65R110D2ATMA1 | Infineon Technologies AG | N-CH 650V 15A 110mOhm HDSOP-16 RoHS : Compliant |
| 1 | ||
![]() Chip 1 Exchange | DTST-65R-V | DIPT | INSTOCK | 183,857 | ||
![]() Avnet Asia | WSJT65R028DWQ | WeEn Semiconductor Co Ltd | (Alt: WSJT65R028DWQ) RoHS : Compliant | 0 | ||
| WSJT65R075DWQ | WeEn Semiconductor Co Ltd | (Alt: WSJT65R075DWQ) RoHS : Compliant | 0 | |||
| WSJT65R075DEQ | WeEn Semiconductor Co Ltd | SUPER-JUNCTION POWER MOSFET (Alt: WSJT65R075DEQ) RoHS : Compliant | 0 | |||
| WSJT65R075DIQ | WeEn Semiconductor Co Ltd | (Alt: WSJT65R075DIQ) RoHS : Compliant | 0 | |||
| AFGHL30T65RQDN | onsemi | IGBT - 650 V 30 A - Short circuit rated FS4? - Automotive qualified (Alt: AFGHL30T65RQDN) RoHS : Compliant | 0 | |||
![]() Avnet Silica | SGT65R65AL | STMicroelectronics | Gallium Nitride GaN Transistor 650 V 25 A 65 Milliohms 54 nC PowerFLAT 5x6 HV 8 Pins Surface Mount (Alt: SGT65R65AL) RoHS : Compliant | 0 | ||
| WSJT65R028DWQ | WeEn Semiconductor Co Ltd | (Alt: WSJT65R028DWQ) RoHS : Compliant | 0 | |||
| WSJT65R075DWQ | WeEn Semiconductor Co Ltd | (Alt: WSJT65R075DWQ) RoHS : Compliant | 0 | |||
| AFGB40T65RQDN | onsemi | IGBT 650 V 40 A Short circuit rated FS4 Automotive qualified (Alt: AFGB40T65RQDN) RoHS : Compliant | 0 | |||
| AFGB30T65RQDN | onsemi | IGBT 650V 30A Short circuit rated FS4 Automotive (Alt: AFGB30T65RQDN) RoHS : Compliant | 0 | |||
| AFGHL50T65RQDN | onsemi | IGBT 650 V 50 A Short circuit rated FS4 Automotive qualified (Alt: AFGHL50T65RQDN) RoHS : Compliant | 0 | |||
| AFGHL30T65RQDN | onsemi | IGBT 650 V 30 A Short circuit rated FS4 Automotive qualified (Alt: AFGHL30T65RQDN) RoHS : Compliant | 0 | |||
![]() DB Roberts | AV-D25-2T65R-50 | Southco | 0 | |||
![]() EBV Elektronik | IMT65R083M1HXUMA1 | Infineon Technologies AG | (Alt: SP005716851) RoHS : Compliant | 4,000 | ||
| IMT65R039M1HXUMA1 | Infineon Technologies AG | (Alt: SP005716838) RoHS : Compliant | 4,000 | |||
| IMT65R057M1HXUMA1 | Infineon Technologies AG | (Alt: SP005716844) RoHS : Compliant | 4,000 | |||
| IMT65R048M1HXUMA1 | Infineon Technologies AG | (Alt: SP005716839) RoHS : Compliant | 4,000 | |||
| IMT65R022M1HXUMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 79 A 650 V 30 Milliohms HSOF 8 Pins (Alt: SP005716811) RoHS : Compliant | 2,000 | |||
| IMT65R030M1HXUMA1 | Infineon Technologies AG | (Alt: SP005716819) RoHS : Compliant | 2,000 | |||
| IGOT65R025D2AUMA1 | Infineon Technologies AG | Gallium Nitride GaN Transistor 650 V 61 A 30 Milliohms 11 nC SOIC Surface Mount (Alt: SP005882212) RoHS : Compliant | 800 | |||
| IGT65R055D2 | Infineon Technologies AG | GaN power transistor (Alt: SP005965883) RoHS : Compliant | 0 | |||
| IGLT65R055D2 | Infineon Technologies AG | GaN power transistor (Alt: SP005865971) RoHS : Compliant | 0 | |||
| IGLT65R017D2 | Infineon Technologies AG | GaN power transistor (Alt: SP006200928) RoHS : Compliant | 0 | |||
| IGT65R140D2ATMA1 | Infineon Technologies AG | Gallium Nitride GaN Transistor 650 V 13 A 017 ohm 18 nC HSOF Surface Mount (Alt: SP005965886) RoHS : Compliant | 0 | |||
| IMT65R050M2HXUMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 481 A 650 V 0046 ohm HSOF (Alt: SP006051127) RoHS : Compliant | 0 | |||
| IMLT65R026M2HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 82 A 650 V 0033 ohm HDSOP (Alt: SP005969467) RoHS : Compliant | 0 | |||
| IPT65R125CFD7XTMA1 | Infineon Technologies AG | Transistor MOSFET 650V 4Pin TOLL (Alt: SP005537610) RoHS : Compliant | 0 | |||
| IMLT65R060M2HXTMA1 | Infineon Technologies AG | Silicon Carbide MOSFET Single N Channel 40 A 650 V 0055 ohm HDSOP (Alt: SP005970060) RoHS : Compliant | 0 | |||
![]() Flip Electronics | AFGHL50T65RQDN | onsemi | Stock, Ship Today RoHS : Compliant | 21,300 | ||
| IPT65R033G7XTMA1 | Infineon Technologies AG | Stock RoHS : Compliant | 6,000 | |||
| AFGHL30T65RQDN | onsemi | Stock, Ship Today RoHS : Compliant | 203 | |||
![]() Master Electronics | ADTST65RV | APEM Inc | Tactile Switch - SPST-NO - Off-Mom - 0.05A 12VDC - Standard Actuator - 9.50mm Actuator Height - Top Actuated - 260gf - Tactile Feedback - PC Pin. RoHS : Compliant |
| 0 | |
![]() Sager | PT65R | TE Connectivity | TE Connectivity | 0 | ||
![]() Vyrian | AFGHL40T65RQDN | onsemi | Insulated Gate Bipolar Transistor, 46A I(C), 650V V(BR)CES, N-Channel, TO-247 RoHS : Compliant | 12,129 | ||
| SIGC100T65R3EX1SA2 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 200A I(C), 650V V(BR)CES, N-Channel RoHS : Compliant | 10,919 | |||
| IGC54T65R3QEX1SA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel RoHS : Compliant | 9,964 | |||
| SIGC76T65R3EX1SA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel RoHS : Compliant | 7,465 | |||
| IPT65R033G7XTMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 69A I(D), 650V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 4,531 | |||
| AFGHL30T65RQDN | onsemi | Insulated Gate Bipolar Transistor, 42A I(C), 650V V(BR)CES, N-Channel, TO-247 RoHS : Compliant | 4,030 |
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