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S2L-154-R2 nhà phân phối |
| nhà phân phối | tên linh kiện | nhà sản xuất | Giải thích chi tiết về linh kiện | Price | Qty. BuyNow | |
![]() Bisco Industries | SXSNS2-L1-P2.5-B12.5-H4-T1 | Misumi Group Inc | 18 | |||
| L62N-1200S-2L | MISC. INDUSTRIAL HRD | 5 | ||||
![]() Rochester Electronics | IPB100N04S2L03ATMA2![]() | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 51,193 | |
| IPB100N06S2L05ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 9 | ||
IPB100N06S2L05ATMA2![]() | Infineon Technologies AG | IPB100N06 - 55V-60V N-Channel Automotive MOSFET RoHS : Compliant | 22,108 | |||
| IPB100N08S2L07ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 75V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 58,946 | ||
IPB160N04S2L03ATMA2![]() | Infineon Technologies AG | MOSFET N-Channel 40V 160A (Tc) TO-263-7 T/R RoHS : Compliant |
| 160 | ||
| IPB80N04S2L03ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 3,000 | ||
IPB80N06S2L07ATMA3![]() | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 784 | ||
IPB80N06S2L09ATMA2![]() | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 104,136 | ||
IPB80N06S2L11ATMA2![]() | Infineon Technologies AG | MOSFET N-Channel 55V 80A (Tc) TO-263-3 T/R RoHS : Compliant |
| 2,530 | ||
| IPB80N06S2LH5ATMA3 | Infineon Technologies AG | OptlMOS N-Channel Power MOSFET RoHS : Compliant |
| 16,000 | ||
IPB80N06S2LH5ATMA4![]() | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 11,156 | ||
| IPB80N08S2L07ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 21,040 | ||
| IPD15N06S2L64ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 19A I(D), 55V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant |
| 300 | ||
| IPD22N08S2L50ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 27A I(D), 75V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant |
| 1,720 | ||
| IPD26N06S2L35ATMA2 | Infineon Technologies AG | MOSFET N-Channel 500V 3.7A (Tc) TO-220-3 Tube RoHS : Compliant |
| 27,995 | ||
![]() Ameya Holding Limited | STPS2L30A![]() | STMicroelectronics | STPS2L30 Series 2 A 0.45 V Schottky Rectifier Surface Mount - DO-214AC RoHS : Compliant | 5,080 | ||
STPS2L40U![]() | STMicroelectronics | STPS2L Series 40 V 2 A Single Chip Schottky Rectifier SMT - DO-214AA (SMB) RoHS : Compliant | 2,580 | |||
| BSS670S2LH6327XTSA1 | Infineon Technologies AG | Single N-Channel 55 V 650 mOhm 1.7 nC OptiMOS™ Enhancement Mode Mosfet - SOT-23 RoHS : Compliant | 2,250 | |||
| RBS2LAM40ATR | ROHM Semiconductor | RoHS : Compliant |
| 300 | ||
| RBS2LAM40CTR | ROHM Semiconductor | RoHS : Compliant |
| 295 | ||
| RBS2LAM40BTR | ROHM Semiconductor | RoHS : Compliant |
| 100 | ||
![]() NexGen Digital | STPS2L60AY | STMicroelectronics | RoHS : Compliant | 10,000 | ||
![]() Rutronik | IPD15N06S2L64ATMA2![]() | Infineon Technologies AG | N-CH 55V 19A 64mOHm TO252 RoHS : Compliant |
| 70,000 | |
| BSS670S2LH6327XTSA1 | Infineon Technologies AG | N-CHANNEL-FET 0,54A 55V SOT23 RoHS : Compliant |
| 66,000 | ||
| IPD22N08S2L50ATMA1 | Infineon Technologies AG | N-CH 75V 22A 50mOhm TO252 RoHS : Compliant |
| 5,000 | ||
| IPD26N06S2L35ATMA2 | Infineon Technologies AG | N-CH 55V 30A 35mOhm TO252 RoHS : Compliant |
| 2,500 | ||
| IPD30N08S2L21ATMA1 | Infineon Technologies AG | MOSFET 75V 21.0mOHM AECQ TO252 RoHS : Compliant |
| 2,500 | ||
IPB160N04S2L03ATMA2![]() | Infineon Technologies AG | N-CH 40V 160A 2,7mOHm TO263-7 RoHS : Compliant |
| 1,000 | ||
IPB80N06S2L07ATMA3![]() | Infineon Technologies AG | N-CH 55V 80A 6.7mOHM TO263 RoHS : Compliant |
| 1,000 | ||
IPB80N06S2L11ATMA2![]() | Infineon Technologies AG | N-CH 55V 80A 10,7mOhm at 4,5V TO263-3 RoHS : Compliant |
| 1,000 | ||
| VS-3C05ET12S2L-M3 | Vishay Intertechnologies | SiC-DIODE 1200V 5A 1.35V TO-263AB 2L RoHS : Compliant |
| 25 | ||
| VS-3C10ET12S2L-M3 | Vishay Intertechnologies | SiC-DIODE 1200V 10A 1.35V TO-263AB 2L RoHS : Compliant |
| 25 | ||
| VS-3C15ET12S2L-M3 | Vishay Intertechnologies | SiC-DIODE 1200V 15A 1.35V TO-263AB 2L RoHS : Compliant |
| 25 | ||
| VS-3C20ET12S2L-M3 | Vishay Intertechnologies | SiC-DIODE 1200V 20A 1.35V TO-263AB 2L RoHS : Compliant |
| 25 | ||
![]() DB Roberts | KN4C----5S2L-21 | Essentra Components | CLAMPING STAR KNOB 1.380 IN DI | 0 | ||
| KN5C----5S2L-21 | Essentra Components | CLAMPING STAR KNOB 1.380 IN DI | 0 | |||
![]() Flip Electronics | AP0100CS2L00SUGA0-DR | onsemi | Stock, Ship Today | 38,177 | ||
MK2308S-2LF![]() | Integrated Device Technology Inc | Stock, Ship Today RoHS : Compliant | 36,402 | |||
MK2308S-2LFT![]() | Integrated Device Technology Inc | Stock RoHS : Compliant | 36,402 | |||
| AP0100CS2L00SUGA0-DR1 | onsemi | Stock, Ship Today RoHS : Compliant | 7,561 | |||
| AP0101CS2L00SPGA0-DR1 | onsemi | Stock, Ship Today RoHS : Compliant | 6,528 | |||
| AFT18P350-4S2LR6 | NXP Semiconductors | Stock, Ship Today RoHS : Compliant | 150 |
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