| công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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P-U60-R nhà phân phối |
| nhà phân phối | tên linh kiện | nhà sản xuất | Giải thích chi tiết về linh kiện | Price | Qty. BuyNow | |
![]() TME | IPU60R1K5CEAKMA2![]() | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | |
| IPU60R2K1CEAKMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 600V; 3.7A; 38W; IPAK,TO251 RoHS : Compliant |
| 0 | ||
![]() Avnet Americas | IPU60R1K5CEAKMA2![]() | Infineon Technologies AG | - Rail/Tube (Alt: IPU60R1K5CEAKMA2) RoHS : Compliant |
| 0 | |
| IPU60R2K1CEAKMA1 | Infineon Technologies AG | Trans MOSFET N 650V 3.7A 3-Pin TO-251 Tube - Rail/Tube (Alt: IPU60R2K1CEAKMA1) RoHS : Compliant | 0 | |||
![]() Mouser Electronics | IPU60R1K5CEAKMA2 | Infineon Technologies AG | MOSFETs CONSUMER RoHS : Compliant |
| 2,914 | |
![]() Newark | IPU60R2K1CEAKMA1 | Infineon Technologies AG | Mosfet, N-Ch, 600V, 3.7A, To-251; |Infineon Technologies IPU60R2K1CEAKMA1 RoHS : Compliant |
| 79 | |
![]() Rochester Electronics | IPU60R2K0C6AKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant |
| 47,296 | |
IPU60R1K4C6BKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant |
| 41,766 | ||
IPU60R1K4C6AKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant |
| 17,370 | ||
IPU60R1K5CEAKMA2![]() | Infineon Technologies AG | MOSFET N-Channel 150V 43A (Tc) TO-220-3 Tube RoHS : Compliant |
| 440 | ||
IPU60R1K0CEAKMA2![]() | Infineon Technologies AG | Power Field-Effect Transistor, 6.8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS : Compliant |
| 19,500 | ||
IPU60R2K0C6BKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant |
| 354,905 | ||
IPU60R1K5CEBKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS : Compliant |
| 193,000 | ||
IPU60R950C6AKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant |
| 118,421 | ||
IPU60R2K1CEBKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS : Compliant |
| 6,512 | ||
| IPU60R2K1CEAKMA1 | Infineon Technologies AG | IPU60R2K1 - 600V CoolMOS N-Channel Power MOSFET RoHS : Compliant |
| 14,789 | ||
| IPU60R3K4CEAKMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant |
| 14,255 | ||
| IPU60R600C6BKMA1 | International Rectifier | Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS : Compliant |
| 877 | ||
![]() EBV Elektronik | IPU60R1K5CEAKMA2![]() | Infineon Technologies AG | (Alt: SP001396898) RoHS : Compliant | 0 | ||
| IPU60R2K1CEAKMA1 | Infineon Technologies AG | Trans MOSFET N 650V 37A 3Pin TO251 Tube (Alt: SP001493880) RoHS : Compliant | 0 | |||
![]() Win Source Electronics | IPU60R2K1CE | Infineon Technologies AG | Very high commutation ruggedness RoHS : Compliant |
| 19,900 | |
| IPU60R2K1CEAKMA1 | Infineon Technologies AG | CONSUMER / N-Channel 600 V 3.7A (Tc) 38W (Tc) Through Hole PG-TO251-3 RoHS : Compliant |
| 11,180 | ||
IPU60R2K1CEBKMA1![]() | Infineon Technologies AG | MOSFET N-CH 600V 2.3A TO251-3 RoHS : Compliant |
| 10,900 |
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