| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
 Hamamatsu Corporation |
P6606
|
155Kb / 4P |
InSb photoconductive detector
|
|
P6606
|
117Kb / 4P |
InSb photoconductive detector
|
|
P5968
|
549Kb / 4P |
InSb photovoltaic detectors
|
|
P3257
|
242Kb / 7P |
MCT photoconductive detectors
|
|
P3207-08
|
239Kb / 7P |
PbSe photoconductive detectors
|
|
P2748
|
226Kb / 4P |
MCT photoconductive detectors
|
|
P2532-01
|
124Kb / 4P |
Infrared detectors utilizing photoconductive effects
|
 VIGO Photonics S.A. |
PCI-2TE
|
797Kb / 2P |
1.0 – 15.0 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photoconductive detectors
08/11/2020 |
|
PCI-3TE
|
774Kb / 2P |
1.0 – 15.0 μm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detectors
08/11/2020 |
|
PCI
|
695Kb / 2P |
1.0 – 12.0 μm HgCdTe ambient temperature, optically immersed photoconductive detectors
08/11/2020 |