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Infineon Technologies A... |
SPN04N60S5
|
4Mb / 10P |
New revolutionary high voltage technology Worldwide best RDS in SOT 223
Rev. 2.2 2005-02-21 |
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SPN02N60C3
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2Mb / 11P |
New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances
Rev. 2.3 2005-02-21 |
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SPP21N50C3
|
2Mb / 14P |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
Rev. 3.0 2007-08-30 |
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SPP20N65C3
|
1Mb / 15P |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220
Rev. 3.0 2007-08-30 |
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SPB12N50C3
|
1Mb / 12P |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
Rev. 2.4 2005-11-07 |
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SPP17N80C3
|
1Mb / 13P |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
Rev. 2.6 2007-08-30 |
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SPP07N60C3
|
1Mb / 15P |
New revolutionary high voltage technology Ultra low gate charge
Rev. 3.1 2007-08-30 |
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SPP11N65C3
|
1,019Kb / 15P |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
Rev. 2.9 2007-08-30 |
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SPB11N60S5
|
691Kb / 11P |
New revolutionary high voltage technology Ultra low gate charge
Rev. 2.3 2005-07-22 |
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SPP04N50C3
|
635Kb / 13P |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
Rev. 2.8 2009-11-26 |
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