| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
Stanson Technology |
ST2315SRG
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218Kb / 6P |
ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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ST2318SRG
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221Kb / 7P |
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
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ST2319SRG
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229Kb / 8P |
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
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ST3401SRG
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212Kb / 6P |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
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STC6332
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421Kb / 9P |
The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
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STP6308
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420Kb / 6P |
STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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STP7401
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461Kb / 6P |
STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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STP9437
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375Kb / 6P |
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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Shenzhen Huazhimei Semi... |
HM1P10MR
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763Kb / 5P |
P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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HM603BK
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938Kb / 8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
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