DESCRIPTION
The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes x 32 pages x 8192 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes x 32 pages).

FEATURES
 • Organization
    Memory cell allay 528 x 128K x 8 x 2
    Register 528 x 8
    Page size 528 bytes
    Block size (16K + 512) bytes
 • Modes
    Read, Reset, Auto Page Program
    Auto Block Erase, Status Read
    Multi Block Program, Multi Block Erase
 • Mode control
    Serial input/output
    Command control
 • Power supply VCC = 2.7 V to 3.6 V
 • Program/Erase Cycles 1E5 cycle (with ECC)
 • Access time
    Cell array to register 25 μs max
    Serial Read Cycle 50 ns min
 • Operating current
    Read (50 ns cycle) 10 mA typ.
    Program (avg.) 10 mA typ.
    Erase (avg.) 10 mA typ.
    Standby 100 μA
 • Package
    TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.)